| Allicdata Part #: | 497-14039-5-ND |
| Manufacturer Part#: |
STW69N65M5-4 |
| Price: | $ 15.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 650V 58A TO-247-4 |
| More Detail: | N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-... |
| DataSheet: | STW69N65M5-4 Datasheet/PDF |
| Quantity: | 467 |
| 1 +: | $ 15.04000 |
| 10 +: | $ 14.58880 |
| 100 +: | $ 14.28800 |
| 1000 +: | $ 13.98720 |
| 10000 +: | $ 13.53600 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-247-4 |
| Supplier Device Package: | TO-247-4L |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 330W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 6420pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 143nC @ 10V |
| Series: | MDmesh™ V |
| Rds On (Max) @ Id, Vgs: | 45 mOhm @ 29A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
| Drain to Source Voltage (Vdss): | 650V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STW69N65M5-4 is a Power MOSFET device that is used for a variety of applications. It has a maximum drain-to-source breakdown voltage of 650V and a maximum gate threshold voltage of 4V. The device is available in a through-hole package and has a gate charge of 35nC. The STW69N65M5-4 is a high-temperature-resistant, low-leakage day MOSFET that offers excellent performance in a wide range of applications.
The applications that are most often used for the STW69N65M5-4 include power delivery systems, DC-DC power converters, power converters, and motor controls. The device can be used in a variety of motor control applications such as servo drives, motion control, and robotics. The device can also be used in power distribution systems, as well as other energy storage systems. The device is well-suited for use in applications that require high-temperature operation, as the device is able to withstand higher temperatures than other MOSFETs.
The working principle of the STW69N65M5-4 is based on the MOSFET device structure and the basic underlying physical principles. The device is composed of a source, a drain, and a channel between them that can be controlled by the gate voltage. When proper gate voltage is applied to the device, the channel between the source and the drain is opened and current can flow between the two electrodes. The voltage applied on the gate controls the current flow and power is transferred from the source to the drain. The device can be used for switching applications, meaning that it can be used to control the flow of current in a circuit by using the gate voltage.
The STW69N65M5-4 can also be used for linear applications, meaning that it can be used to accurately control and regulate the current flow. This is often done by using the device in combination with other devices, such as resistors or capacitors, to provide precise voltage regulation. It is also possible to use the device as an amplifier, by controlling the current flow through the device to accurately control an output signal.
The STW69N65M5-4 can be used in a variety of applications and provides excellent performance. The device is able to withstand high temperatures and is also low-leakage, meaning that it can be used in applications with little power loss. The device can be used to control the current flow in a circuit and can also be used as an amplifier and voltage regulator.
The specific data is subject to PDF, and the above content is for reference
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STW69N65M5-4 Datasheet/PDF