Allicdata Part #: | STW63N65DM2-ND |
Manufacturer Part#: |
STW63N65DM2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET |
More Detail: | N-Channel 650V 65A Through Hole TO-247 |
DataSheet: | STW63N65DM2 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Power Dissipation (Max): | -- |
FET Feature: | -- |
Vgs (Max): | -- |
Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 100V |
Series: | FDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | -- |
Drive Voltage (Max Rds On, Min Rds On): | -- |
Current - Continuous Drain (Id) @ 25°C: | 65A |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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Transistors, namely Field Effect Transistors (FETs), are essentially semiconductor devices with the ability to amplify and switch electrical signals. FETs are commonly used in power electronics applications due to their superior power dissipation capabilities over regular transistors. The STW63N65DM2 is an example of a single N-Channel FET which has earned a reputation for being a rugged and reliable device.
The STW63N65DM2 is a power MOSFET, meaning it uses a Metal Oxide Field Effect. It is an insulated gate type, featuring a standard package with parallel drain source tabs for quick and simple installation.
The STW63N65DM2 has many different application fields. It is commonly used in some high power AC/DC conversion circuitry in order to control the electrical flow. Additionally, it can be used in regulation circuits for various types of equipment such as for battery chargers. In automotive systems, it can be implemented as a switch to control several power sources from a single unit, or as a reverse polarity protection switch.
In terms of its working principle, the STW63N65DM2 operates by using an electric field to control the current through the device. It consists of a source, drain and gate electrode, where the gate is covered by a thin oxide layer that insulates it from the other electrodes. The gate voltage controls the flow of electrons between the source and drain, and as it increases, the resistance between the source and drain decreases. This effect is known as the “electrostatic field effect” which is the principle which the STW63N65DM2 utilizes.
The STW63N65DM2 has several advantages over other types of FETs. Firstly, it is capable of switching high voltages and currents, and secondly, its gate control gives excellent linearity between voltage and current, meaning that the device can accurately regulate flow between source and drain. Moreover, its relatively small size helps to maximize application space efficiency.
Overall, the STW63N65DM2 is a reliable and versatile device, suitable for use in a variety of power electronics applications. Its ability to handle high voltages, currents, and accurately regulate the flow between source and drain make it an ideal choice for a variety of new and existing power electronics systems.
The specific data is subject to PDF, and the above content is for reference
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