STW6N95K5

Vgs(th) (Max) @ Id:	5V @ 100µA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	90W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	450pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	SuperMESH5™
Rds On (Max) @ Id, Vgs:	1.25 Ohm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9A (Tc)
Drain to Source Voltage (Vdss):	950V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STW6N95K5 Application Field and Working Principle

The STW6N95K5 is a vertical N-channel MOSFET transistor produced by Toshiba. It is a single transistor with N-channel enhancement type MOSFET, which makes it suitable for a variety of applications. It is designed for use in discrete applications in new and renewable energies, photovoltaic, automotive and automotive-related power electronics. The advanced technologies used in the manufacturing process of the STW6N95K5 ensure a combination of very low on-resistance, a low gate charge and a low reverse transfer capacitance. This makes the transistor suitable for switching applications with high speed, low gate noise, low gate loss and disturbance-free, high-quality energy efficiency.The STW6N95K5 is usually used for a variety of applications in power switching, synchronous rectifiers, Dims and DC-DC converters, automotive relays, motor control, digital audio and other audio equipment. It can also be used in a variety of operating conditions, as it has an extended operating temperature range of up to 150°C and an operating voltage of up to 200V. The STW6N95K5 uses a vertical conductive layer depending on the voltage applied to the gate. This vertical conductive layer can be used to control and manage the current of the transistor. The gate of the transistor is separated from the source and drain with a thin dielectric layer, which gives it improved voltage and current rating. The operating principle of the STW6N95K5 is simple. When a voltage is applied to the gate, the voltage induces an electric field between the gate and the source. This electric field influences the vertical conductive layer, making it conduct and allowing current to flow between the source and the drain. When the electric field is removed, the vertical conductive layer again reverts to its non-conducting state and the current stops flowing. The STW6N95K5 has a wide range of application fields like power switching, synchronous rectifiers, and DC-DC converters. It is used in various automotive applications like electric vehicles, electronic relays and motor control, making it one of the most popular transistors in the automotive industry. It is also used in digital and audio equipment like mixer amplifiers, audio receivers, CD players and other audio equipment. The STW6N95K5 is designed to provide reliable and efficient performance, with a high switching speed, low gate-charge, low on resistance and improved current and voltage ratings. The improved features makes it ideal for applications like electric cars, electronic relays, power electronics and also for use in audio equipment. Furthermore, its extended operating temperature range and its superior electro-static discharge protection make it reliable and dependable. In summary, the STW6N95K5 is a vertical N-channel MOSFET transistor produced by Toshiba that is ideal for a variety of applications like power switching, motor control, synchronous rectifiers and DC-DC converters. It is specially designed to provide reliable and efficient performance, with high switching speed, low gate-charge, low on resistance and improved current and voltage ratings. Its extended operating temperature range and superior electro-static discharge protection make it reliable and dependable.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description