STW65N80K5 Allicdata Electronics
Allicdata Part #:

497-16333-5-ND

Manufacturer Part#:

STW65N80K5

Price: $ 10.52
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 46A
More Detail: N-Channel 800V 46A (Tc) 446W (Tc) Through Hole TO-...
DataSheet: STW65N80K5 datasheetSTW65N80K5 Datasheet/PDF
Quantity: 1000
1 +: $ 10.52000
10 +: $ 10.20440
100 +: $ 9.99400
1000 +: $ 9.78360
10000 +: $ 9.46800
Stock 1000Can Ship Immediately
$ 10.52
Specifications
Vgs(th) (Max) @ Id: 5V @ 100µA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 446W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3230pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 92nC @ 10V
Series: MDmesh™ K5
Rds On (Max) @ Id, Vgs: 80 mOhm @ 23A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STW65N80K5 is a power MOSFET (metal oxide semiconductor field-effect transistor) manufactured by Infineon Technologies. It is a N channel MOSFET with 8 mOhms of RDS(on).

A MOSFET is a voltage-controlled field-effect transistor. Unlike regular transistors which have three terminals – voltage input, voltage output and current output – MOSFETs have an additional gate terminal. The gate acts as a switch controlling the resistance between the source and drain, thus controlling the current flow in the device.

The STW65N80K5 was designed with power efficiency in mind. It has an integrated EMI (electromagnetic interference) filter which allows it to function efficiently under high EMI environments. This feature makes it suitable for use in applications such as switching power supplies, lighting, HVAC, automotive, telecommunications, and general industrial applications.

The STW65N80K5 is available in TO-247 and TO-254 package styles. It operates over a wide range of temperatures from -55°C to +175°C. The RDS(on) of this MOSFET is 8 mOhms at 10V. It has an avalanche energy rating of 60 mJ and is capable of withstanding up to 3 amps of continuous drain current.

The STW65N80K5 is designed to be used in switching applications. This type of application requires a reliable and efficient device that can switch on and off rapidly. The integrated EMI filter allows the device to work efficiently under high EMI environments, reducing the possibility of interference caused by the device. When a voltage is applied to the gate, the internal resistance between the source and drain rapidly drops to provide a low-resistance path for current flow. When the voltage is removed, the internal resistance increases, preventing current flow.

In addition to its efficiency and speed, the STW65N80K5 offers a high level of reliability. It is capable of withstanding up to 3 amps of continuous drain current and has an avalanche energy rating of 60 mJ. This makes the device well-suited for use in harsh environments.

In conclusion, the STW65N80K5 is an efficient and reliable power MOSFET. It is suitable for use in switching applications such as power supplies, lighting, HVAC, automotive, telecommunications, and general industrial applications. The device is available in TO-247 and TO-254 package styles and operates over a wide range of temperatures. It can withstand up to 3 amps of continuous drain current and has an avalanche energy rating of 60 mJ, making it an ideal solution for applications that require a reliable and efficient MOSFET.

The specific data is subject to PDF, and the above content is for reference

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