SUD06N10-225L-E3 Discrete Semiconductor Products

The SUD06N10-225L-E3 is a single N-Channel Enhancement Mode Field Effect Transistor (FET) manufactured by Infineon Technologies. It is a small signal MOSFET manufactured using high-voltage P-channel silicon gate CMOS process technology. It is primarily used in a wide range of analog and digital applications that require high power switching efficiency with low RDS(on) and fast switching speed.

The SUD06N10-225L-E3 is primarily used in analogue communication systems, including those used for low frequency voice communication and high frequency data communication. It is used in systems such as GSM and GPRS for switching high power signals with low power losses to the antenna line. This device is also ideally suited for switch mode power supply or conversion applications such as those used in lighting. Furthermore, it can be used in DC-DC, AC-DC converters, as well as DC-AC inverters, such as in a wide range of switching controllers.

The SUD06N10-225L-E3 device comes with embedded product enhancement features such as a gate-source ESD protection diode, avalanche ruggedness, a drain-source avalanche diode, and a diode metallisation structure which ensures optimum product properties. In addition to this, the device is equipped with an integrated Level-Shifter which ensures compatibility with lower gate-drive voltage levels. This is highly beneficial for applications where the gate drive voltage can be as low as 5.5V.

The SUD06N10-225L-E3 offers superior switching performance, with a maximum RDS(on) of 0.22 Ohm and an enhanced Gate-Charge (Qg) of 77nC. This results in higher switching speeds and up to 30% reduction in power consumption as compared to other products on the market. Additionally, the device features a low gate to source leakage current and reverse transfer capacitance, which further increases power efficiency.

The SUD06N10-225L-E3 exhibits outstanding thermal performance and is RoHS compliant. It is also AEC-Q100 qualified with a maximum junction temperature of 175C. This ensures that the device is robust and reliable in various automotive applications.

In summary, the SUD06N10-225L-E3 is a single N-Channel Enhancement Mode Field Effect Transistor designed for use in a wide range of analog and digital applications. It offers superior power switching performance, excellent thermal performance and is AEC-Q100 qualified. Thus, it is an ideal choice for those looking for a reliable, robust and feature-rich device for their automotive systems.