SUD09P10-195-GE3 Discrete Semiconductor Products

The SUD09P10-195-GE3 is a single enhancement mode FET (field effect transistor) device made by Infineon. It is part of Infineon\'s power MOSFET family, which provides enhanced performance and convenience when compared to traditional FETs.

The SUD09P10-195-GE3 has a -195V maximum drain to source voltage rating and a maximum current rating of 10A. It also has an on resistance of 0.15Ω and a gate charge of 6nC. The SUD09P10-195-GE3 can operate over a temperature range of -55°C to 175°C, making it an ideal choice for high temperature environments.

The SUD09P10-195-GE3 is primarily used in applications such as power management, motor controls, and voltage regulators. In motor control, it can be used to accurately control motor speed, while in voltage regulators it is used to prevent overvoltage or undervoltage from occurring. It can also be used in applications such as lighting, noise suppression, and telecom systems.

The working principle of the SUD09P10-195-GE3 is based on the action of the field effect transistor (FET). FETs are voltage-controlled semiconductor devices which use the electric field of an insulated gate electrode to control the conductivity of a channel between two other electrodes. As an enhancement mode FET, the SUD09P10-195-GE3 relies on voltage applied to its gate terminal to turn it on and off. When the FET is in its \'on\' state, current can flow between the two other electrodes, while in its \'off\' state, the current is blocked. This action enables the SUD09P10-195-GE3 to be used to switch signals or current on and off, allowing it to be used in a wide variety of applications.

In summary, the SUD09P10-195-GE3 is an enhancement mode FET which can be used in a variety of applications including power management, motor control, and voltage regulation. It operates over a temperature range of -55°C to 175°C, and has a maximum drain to source voltage rating of -195V and a maximum current rating of 10A. It works by relying on the action of the electric field on the gate electrode to control the conductivity of a channel between the two other electrodes.