SUD08P06-155L-GE3 Discrete Semiconductor Products |
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| Allicdata Part #: | SUD08P06-155L-GE3TR-ND |
| Manufacturer Part#: |
SUD08P06-155L-GE3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 8.4A DPAK |
| More Detail: | P-Channel 60V 8.4A (Tc) 1.7W (Ta), 20.8W (Tc) Surf... |
| DataSheet: |  SUD08P06-155L-GE3 Datasheet/PDF |
| Quantity: | 6000 |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Base Part Number: | SUD08P06 |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.7W (Ta), 20.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
| Vgs (Max): | ±20V |
| Series: | TrenchFET® |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 155 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.4A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SUD08P06-155L-GE3 is a single N-channel MOSFET chip manufactured by STMicroelectronics. It is a power component designed for use in various applications that require high-speed switching and pulse-width modulation (PWM) control. The SUD08P06-155L-GE3 is ideal for use in motor control, switching, and inductive and LED lighting control.
Description
The SUD08P06-155L-GE3 chip is a single N-channel MOSFET in a small SOT-23-8F package, making it perfect for applications that require a small footprint. The device features an RDS(ON) of only 0.12 Ω, a low gate-source threshold voltage of 2V, and an ultra-low gate charge of only 5nC. It also has a wide temperature range of -55°C to 150°C, making it suitable for use in a variety of applications.
Features
- Very low gate charge
- Low gate-source threshold voltage
- Low on-state resistance
- High-speed switching
- Wide temperature range
Application Fields
The SUD08P06-155L-GE3 chip is suited for use in a variety of applications requiring high switching speeds and low-power consumption, such as motor control, switching, and LED/inductive lighting control. It can also be used in applications requiring pulse-width modulation (PWM) control, such as DC/DC converters, switched-mode power supplies (SMPS), and other power electronics applications.
Working Principle
The SUD08P06-155L-GE3 is a voltage-controlled MOSFET, meaning that its on/off state is determined by the voltage applied to its gate terminal. When a positive voltage is applied to the gate terminal, the device turns on and current flows from the drain to the source. When a negative voltage is applied, the device turns off and no current flows.
The device is also capable of high-speed switching, as the MOSFET structure allows for very low switching times. The SUD08P06-155L-GE3 has a low-state resistance of 0.12Ω, as well as an ultra-low gate charge of only 5nC. This makes it suitable for applications requiring high-speed switching and low power consumption.
Conclusion
The SUD08P06-155L-GE3 is a single N-channel MOSFET chip manufactured by STMicroelectronics. It is a power component designed for use in various applications that require high-speed switching and pulse-width modulation (PWM) control. With its low gate-source threshold voltage, low on-state resistance, wide temperature range, and low gate charge, the SUD08P06-155L-GE3 is ideal for use in motor control, switching, LED lighting control, and other applications requiring power electronics or PWM control.
The specific data is subject to PDF, and the above content is for reference
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