| Allicdata Part #: | SUD08P06-155L-T4E3-ND |
| Manufacturer Part#: |
SUD08P06-155L-T4E3 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 60V 8.4A DPAK |
| More Detail: | P-Channel 60V 8.4A (Tc) 1.7W (Ta), 20.8W (Tc) Surf... |
| DataSheet: |  SUD08P06-155L-T4E3 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252, (D-Pak) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 1.7W (Ta), 20.8W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
| Series: | TrenchFET® |
| Rds On (Max) @ Id, Vgs: | 155 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 8.4A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The SUD08P06-155L-T4E3 is a single N-Channel Enhancement Mode Field Effect Transistor (FET) that is part of the subminiature package product line designed for ease of use and manufacturing cost savings. The SUD08P06-155L-T4E3 offers low on-resistance, low gate drive, fast switching times, and a rugged package design. It is widely used in industrial motors, switches, battery systems, and telecommunications.
The working principle of an N-Channel Enhancement Mode Field Effect Transistor is based on the physical properties of the semiconductor material used. The FET is constructed with an insulating gate that controls the flow of current between the source and drain regions. When a voltage source is applied to the gate, a negative potential is created that attracts electrons in the region between the source and drain regions, forming an electrically conductive channel. This channel is sensitive to current flow and can be adjusted with the applied gate voltage. This makes the SUD08P06-155L-T4E3 an ideal choice for controlling current with precision and low power consumption.
The advantages of the SUD08P06-155L-T4E3 include its low power consumption, fast switching times, and highly reliable operation. It is also highly durable, making it well suited for use in the toughest environments. Because of its small size and low cost, the transistor is widely used for switching and control applications in automobile, industrial, and home appliances.
The SUD08P06-155L-T4E3 also is ideal for use in battery systems. Its low on-resistance allows for efficient power conversion, making it perfect for boosting battery life and reducing charging time. In telecommunications, the FET is used for functions such as signal modulation, voltage regulation, and frequency control. Its low noise and low leakage current make it ideal for use in high-precision systems.
The SUD08P06-155L-T4E3 offers a wide range of applications, making it an ideal choice for many designs. Its small size, low power consumption, and high reliability make it perfectly suited for a variety of control and switching applications in the industrial, automotive, and telecommunications industries. The FET is a reliable and cost-effective solution, making it a popular choice for use in electronic designs.
The specific data is subject to PDF, and the above content is for reference
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