SUD06N10-225L-GE3 Discrete Semiconductor Products

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The SUD06N10-225L-GE3 is a discrete MOSFET (Metal Oxide Semiconductor Field Effect Transistor) that is manufactured by the semiconductor foundry Semiconductor S.A. It\'s a single field-effect transistor (FET) which is useful in many electronics applications. This particular transistor is rated for a maximum continuous drain-source current of 2.2A max, a maximum voltage of 25V, and a maximum gate-source voltage of +/-12V. In this article, we\'ll discuss the applications of the SUD06N10-225L-GE3, as well as its operating principle.

Applications

The SUD06N10-225L-GE3 has a wide range of potential applications. It can be used to create circuits for switching, amplifier stages, signal buffering, and low-noise applications. It can also be used in power supplies, inverters, pulse width modulators, motor controllers, and other voltage and current regulating circuits. Additionally, this particular MOSFET is small enough to be used in handheld and wearable devices, such as smartphones and smartwatches.

Working Principle

MOSFETs work using the effect of an electrostatic gate field on the conduction path between the drain and source. The switching of MOSFETs is based on the principle of “Channel Controllability”, meaning that the MOSFET can be switched on and off by varying the gate voltage. When a positive voltage is applied to the gate of the SUD06N10-225L-GE3, it creates an electric field which affects the electrons in the conducting channel, decreasing the current resistance between the drain and source terminals. This allows for current to flow between the drain and source. Conversely, when the gate voltage is reduced, the electric field (and hence, the current) is reduced as well, and the MOSFET is switched off.

The main advantage of the SUD06N10-225L-GE3 is its capability to switch fast while consuming low operating power. This makes it suitable for high speed switching applications. Additionally, the MOSFET has low “on” resistance, allowing for higher power efficiency and lower current/voltage drop. The SUD06N10-225L-GE3 also features good thermal performance, meaning it can handle high power dissipation without overheating. Finally, due to its small size, it is suitable for use in handheld and wearables applications.

Conclusion

The SUD06N10-225L-GE3 is a single field-effect transistor that is rated for maximum continuous drain-source current of 2.2A max, maximum voltage of 25V, and maximum gate-source voltage of +/-12V. This MOSFET can be used in a wide variety of applications, including as a switch, amplifier stages, signal buffering, and low-noise applications. It is also suitable for handheld and wearable devices due to its small size. MOSFETs work through the effect of an electrostatic gate field on the conduction path between the drain and source, allowing for current to flow when the gate voltage is increased. Overall, the SUD06N10-225L-GE3 is a high performance, low power consuming MOSFET that is suitable for many electronic applications.

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