SUD17N25-165-E3 Discrete Semiconductor Products

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The SUD17N25-165-E3 is a single N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a breakdown voltage rating of 175V. It is an enhancement-mode MOSFET, operated at low voltages, suitable for driving low-power applications, such as logic circuits, buzzers and lamps. The SUD17N25-165-E3 is a popular choice for applications including consumer electronics, automotive, and industrial power electronics.

A MOSFET is a type of transistor, a semiconductor component that acts as a switch or amplifier. In the MOSFET structure, a metal gate is separated from the semiconductor material by an oxide layer, thus forming an insulator. Applying an input voltage causes the gate to become positive and attracts electrons, allowing current to flow through the device.

MOSFETs are convenient and popular because they are smaller and have lower power dissipation than their BJT (Bipolar Junction Transistor) counterparts. Additionally, they can be used in more specified applications than BJTs, as they require low gate bias voltages and allow accurately adjusting the drain current. Due to these advantages, MOSFETs have become the dominant type of transistor used in the majority of electronic components.

The SUD17N25-165-E3 has a wide range of applications because of its low V_TH, low R_DSon and resistive switching features. These features allow it to be used for a variety of circuits, such as boost converters, high-current converters, power on/off switch circuits, PWM controllers and audio amplifiers. It can also be used for logic-level translation, blinkers and electronic thermostats. Its low RDSon (0.042 Ω) allows it to handle up to 3A of continuous current while staying cool in power electronics applications.

In terms of its working principle, the input voltage applied to the gate controls an electric field which is also known as the depletion region. This electric field determines whether the device is ON or OFF. When the gate voltage is increased, the depletion region decreases and the channel becomes more conductive. This allows current to flow from the source to the drain, turning the device ON. Conversely, when the gate voltage is decreased, the depletion region is widened, thus blocking the current from flowing, turning the device OFF.

The SUD17N25-165-E3 is an ideal choice for a wide range of low-power applications due to its excellent switching capability and high breakdown voltage. Its versatility and low power dissipation make it a popular choice for designers looking to reduce the size and complexity of their circuits.

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