SUD19P06-60L-E3 Allicdata Electronics

SUD19P06-60L-E3 Discrete Semiconductor Products

Allicdata Part #:

SUD19P06-60L-E3TR-ND

Manufacturer Part#:

SUD19P06-60L-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 60V 19A TO252
More Detail: P-Channel 60V 19A (Tc) 2.7W (Ta), 46W (Tc) Surface...
DataSheet: SUD19P06-60L-E3 datasheetSUD19P06-60L-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.7W (Ta), 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 60 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SUD19P06-60L-E3 is a field effect transistor (FET) originally developed by Vishay, capable of operating from a subthreshold region of -2V to enhance the driver capability. The low-on-resistance of these devices enables them to operate even at sub-threshold values, making them an ideal power device for automotive and other high- reliability applications.

The SUD19P06-60L-E3 is a N-channel enhancement FET with a maximum drain-source voltage of 60V and a maximum drain current of 6A. Its gate-source voltage range is from -2V to 25V, and its gate-drain capacitance is 260pF (at 1MHz). It is constructed using the vertical double diffusion metal oxide semiconductor (DMOS) process technology, which enables a delicate balancing between device performance, cost, and component area. This process technology is compliant to the Restriction of Hazardous Substances (RoHS) directives.

The working principle of the SUD19P06-60L-E3 involves applying a gate voltage that is sufficiently large compared to the source voltage so that the channel is created. This allows current to flow from the source to the drain. When the gate-source voltage is equal to zero, there will be no channel formed, and no current can flow through the device. The drain-source voltage controls the drain current as the gate-drain voltage increases.

This FET is ideally suited for use in high-reliability applications such as automotive electronics, because of its robust design. It features full temperature-recovery on-state characteristics, making it well-suited for automotive applications where temperature cycling is common. It also features "snapback" protection, making it resistant to accidental avalanche breakdowns, which makes it safe to use in automotive circuits.

In addition, the SUD19P06-60L-E3 includes an integrated body diode, making it suitable for reverse-polarity operation or for use as a freewheeling diode. It also offers full logic level control through the gate, allowing for precise control of the load current. This device has proven to be very reliable in applications such as power supplies, motor control, DC-DC converters, relay control circuits, and inverters, where it can be used to achieve fast switching at high current loads.

The SUD19P06-60L-E3 is an ideal choice for power applications that require high-reliability, efficient operation and robustness. By offering a wide range of features in a single device, it provides a cost-effective solution for design engineers, as well as improves performance and reliability.The specific data is subject to PDF, and the above content is for reference

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