Allicdata Part #: | SUD19N20-90-T4-E3-ND |
Manufacturer Part#: |
SUD19N20-90-T4-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 19A TO252 |
More Detail: | N-Channel 200V 19A (Tc) 3W (Ta), 136W (Tc) Surface... |
DataSheet: | SUD19N20-90-T4-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 51nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1800pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 3W (Ta), 136W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The SUD19N20-90-T4-E3 is a semiconductor device, specifically classified as a Field Effect Transistor (FET). FETs are devices that use an electric field to control the movement of electrons within a given semiconductor material. The SUD19N20-90-T4-E3 belongs to the specific FET subcategory of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs).
MOSFETs are one of the two main classes of FETs, the other being Junction Field Effect Transistors (JFETs). While JFETs enable current to be amplified using a voltage difference between the source and the gate terminals, MOSFETs amplify a current using a voltage difference between the gate and body terminals, respectively.
The SUD19N20-90-T4-E3 is a single MOSFET, meaning that all components – the source, gate and body terminals – are isolated within the same package size. Single MOSFETs best suit applications where a loss in power efficiency isn’t critical in order to reduce the amount of components required in a circuit.
The main purpose of the SUD19N20-90-T4-E3 is to switch and control voltage, current, power and dB gain in systems where a low-current signal is used to switch a higher-current power supply between two power levels. This is applicable where a single MOSFET can suffice, such as consumer electronics and LED driver applications.
The basic premise of the SUD19N20-90-T4-E3’s operation is the movement of charge carriers, namely electrons, through the source and drain terminals by manipulating a gate voltage. Depending on the applied gate voltage with respect to the source voltage, the FET will exhibit either an On- or Off-state.
When in the On-state, a current will flow through the device acting as an open circuit from the source to drain terminals. Conversely, when in the Off-state, the source and drain terminals act as a closed circuit. By controlling the voltage on the gate terminal, the SUD19N20-90-T4-E3 can be used to drive a current in either direction through a given circuit.
The SUD19N20-90-T4-E3 is designed to provide efficient conversions between logic levels used in digital circuits. This is due to its properties – such as low on-currents, low stand-by currents, low voltage drop and faster switching times than other MOSFETs – that offer a competitive advantage compared to the alternatives. The SUD19N20-90-T4-E3’s fast switching component makes it extremely well suited to electronic systems that require a rapid switching time in order to operate effectively.
A single SUD19N20-90-T4-E3 device is capable of handling a voltage up to 20V and a current up to 900mA. Overall, the SUD19N20-90-T4-E3 provides a highly effective and efficient means of switching and controlling a current in digital applications such as consumer electronic systems and LED drivers.
The specific data is subject to PDF, and the above content is for reference
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