SUD19P06-60-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUD19P06-60-GE3TR-ND |
Manufacturer Part#: |
SUD19P06-60-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 18.3A TO-252 |
More Detail: | P-Channel 60V 18.3A (Tc) 2.3W (Ta), 38.5W (Tc) Sur... |
DataSheet: | SUD19P06-60-GE3 Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.3W (Ta), 38.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 18.3A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SUD19P06-60-GE3 transistor is an N-channel enhancement mode field-effect transistor (FET) used in a wide variety of applications. This particular FET is used primarily in high-powered and high-frequency applications, such as in power amplifiers, power supplies and audio amplifier circuits. This transistor is also used in commercial, industrial and household devices for controlling power levels and for providing increased current flow.
The SUD19P06-60-GE3 is particularly useful for switching applications, because it has a low drain-to-source ON resistance. This allows for more efficient use of power. It also has a high frequency response, which allows it to respond quickly to changes in the circuit. The SUD19P06-60-GE3 is also capable of robustly handling high power levels, due to its high voltage and current ratings.
In terms of functionality, the SUD19P06-60-GE3 operates on the principle of FETs. FETs are transistors that are composed of three terminals, instead of the two associated with bipolar transistors. These three terminals are the source, gate, and drain. When the device is in forward bias, the source terminal is connected to the negative voltage, the gate terminal is connected to the positive voltage, and the drain terminal is connected to the circuit load. This creates an electric field between the source and gate, allowing current to flow through the transistor.
When a positive voltage is applied to the gate terminal, electrons will be attracted to the gate and form a layer of charge around the gate, which is known as the depletion layer. This layer prevents the flow of current between the source and gate and reduces the drain-source resistance. This effect is known as the fourth (or pinch) effect and is how FETs are able to control current flow. When the gate voltage is reduced, the depletion layer disappears and the current can flow freely. The ability to control this flow of current makes FETs an ideal choice for many applications, including switching and keypads.
The SUD19P06-60-GE3 is a versatile device and is capable of working in a wide range of applications, from high-powered devices to low-power applications. It is popularly used in power supplies, audio amplifiers, power amplifiers, and power switching circuits. It also offers a variety of protection features, including thermal protection, over-current protection, and over-voltage protection.
In conclusion, the SUD19P06-60-GE3 is a versatile N-Channel Enhancement Mode Field Effect Transistor (FET) that is able to control current flow efficiently and reliably. This device is suitable for many applications, ranging from high-power devices to low-power applications. Its low drain-to-source on-resistance coupled with its high-frequency response makes it a great choice for switching and keypad applications, while its numerous protection features make it a safe and reliable choice for commercial and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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