SUD19N20-90-E3 Discrete Semiconductor Products

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SUD19N20-90-E3 Application Field and Working Principle

The SUD19N20-90-E3 is a high-speed, low-on-resistance Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is specially designed to provide high performance in applications requiring very high switching frequency, low on-resistance, and low gate charge. This MOSFET device is used in applications including power supply, power drivers, switching regulators, motor drivers, and many other power applications.

MOSFETs are transistors that use a voltage signal between the gate and the source to control current flow. Unlike traditional bipolar transistors, MOSFETs have no temperature-dependent components, making them highly reliable and consistent in from device to device. MOSFETs are also among the most efficient devices in conducting current through their low on-resistance. This makes them ideal for high power applications, where power loss should be minimized.

The SUD19N20-90-E3 can operate at temperatures up to 175 ° Celsius and withlow gate charge. The threshold voltage (Vth) of the SUD19N20-90-E3 is -2.0 V, and the maximum gate-source voltage (Vgs) is -20 V. This gives it a maximum drain-source voltage (Vds) of up to 900 V, with an on-resistance of only 0.55 Ohms. The device also features a very low Miller capacitance and Miller time constant, which makes it an ideal choice for high frequency applications such as industrial motor drives.

In summary, the SUD19N20-90-E3 is a high-performance single MOSFET with exceptional performance characteristics to ensure reliable and robust operation even over temperature. The device is ideal for use in applications requiring very high switching frequencies, low on-resistance, and low gate charge. It can also provide excellent power efficiency for a variety of power supply, power driver, and switch regulator applications.

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