SUM50020E-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM50020E-GE3TR-ND |
Manufacturer Part#: |
SUM50020E-GE3 |
Price: | $ 1.24 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 120A TO263 |
More Detail: | N-Channel 60V 120A (Tc) 375W (Tc) Surface Mount TO... |
DataSheet: | SUM50020E-GE3 Datasheet/PDF |
Quantity: | 800 |
800 +: | $ 1.12968 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 11150pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 128nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 2.2 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 7.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SUM50020E-GE3 is a single enhancement mode Field-Effect Transistor (FET) designed for high voltage, low-side switching applications. It features an integrated low-side Schottky diode, low-resistance drain/source ESD protection, and low on-resistance to ensure low power dissipation. This FET is suitable for use in high-side and low-side switching circuits in consumer, automotive and industrial applications.
Application Field
SUM50020E-GE3 can be used in consumer, automotive and industrial applications where a low-side FET is needed. These applications include high side and low side DC-DC converters, AC/DC converters, and relay circuits. It also can be used in industrial and consumer circuits as a high side switch, e.g. for switching between low voltage and high voltage power supplies. As the device has low capacitance and high frequency switching, it is well suited for high frequency switching applications. In addition, it can be used in high-side DC-DC converters, AC/DC converters, and relay circuits with high switching frequency.
Working Principle
The SUM50020E-GE3 is a single enhancement mode FET designed for low-side switching applications. It is composed of two parts: the Gate and the Source. The gate is used to control the current flow between the source and the drain (which is connected to ground). When the gate voltage is low, the device is “off” and no current flows; when the gate voltage is high, the device is “on” and current flows.
The SUM50020E-GE3 has an integrated low-side Schottky diode that helps minimize switching losses. This diode is activated by the gate of the FET and can be used to protect the FET when it is turned “on”. The device also has a low on-resistance which helps keep power dissipation low.
The device is also ESD protected and it has high noise immunity which helps protect circuitry from accidental high voltage discharges. Additionally, it has a high switching frequency, high-speed turn-on/off, and low capacitance which make it well-suited for high frequency switching applications.
Conclusion
The SUM50020E-GE3 is a single enhancement mode Field-Effect Transistor (FET) designed for high voltage, low-side switching applications. It features an integrated low-side Schottky diode, low-resistance drain/source ESD protection, and low on-resistance. This device is suitable for use in high-side and low-side switching circuits in consumer, automotive and industrial applications. It has an integrated low-side Schottky diode that helps minimize switching losses, high noise immunity, and low capacitance which make it well-suited for high frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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