SUM52N20-39P-E3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200V
Current - Continuous Drain (Id) @ 25°C:	52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V, 15V
Rds On (Max) @ Id, Vgs:	38 mOhm @ 20A, 15V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	185nC @ 15V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	4220pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.12W (Ta), 250W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263 (D2Pak)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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The SUM52N20-39P-E3 is a single-level Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This type of transistor is used for a variety of applications, including power switching, analog signal amplification, radio frequency switching and low-level digital logic. The SUM52N20-39P-E3 is designed for low on resistance, low-voltage operation, fast switching and low-power consumption. The SUM52N20-39P-E3 is a N-Channel Enhancement type MOSFET, which means that it is a three-terminal power semiconductor device that works by using an insulated gate to control the conduction of current. It also has a high input impedance and low input capacitance, making it ideal for high-speed switching applications. The device is typically operated with a gate-to-source voltage of between 3 to 20 volts, Source-to-drain current of 13 amperes, Collector-to-emitter voltage of either 12 or 20 volts, and operating frequency range of 2.5 to 3.5 MHz. The MOSFET works by applying a voltage to the gate terminal which, in turn, modulates the conductivity between the source and drain terminals, with the amount of current flowing through the channel being directly proportional to the applied gate voltage. The higher the gate voltage, the greater the current flow. The gate also acts as an insulator, preventing current from flowing between the source and drain terminals when no gate voltage is applied. This provides excellent device isolation and noise filtering when used in high-speed signal switching applications. The MOSFET can be used in a variety of applications, including power control circuitry, audio amplifiers, radio frequency switching circuits, and logic gates. MOSFETs are also frequently used as drivers in high-power drive circuits, as they can provide large currents with minimal power loss. In addition to its low on-resistance, the high input impedance and low input capacitance of the SUM52N20-39P-E3 make it ideal for use in applications requiring fast switching and high-speed signal transfer. The SUM52N20-39P-E3 is a versatile device and is suitable for a wide range of applications due to its low on-resistance, low-voltage operation, fast switching, and low-power consumption. Its high input impedance and low input capacitance make it ideal for use in high-speed signal switching applications. By applying a voltage to the gate terminal, the device can modulate the conductivity between the source and drain terminals, with the amount of current flowing being directly proportional to the applied gate voltage. Therefore, it can be used in a variety of applications, from power control to logic gates, radio frequency switching and high-power drive circuits.

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