SUM55P06-19L-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SUM55P06-19L-E3TR-ND |
Manufacturer Part#: |
SUM55P06-19L-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 55A D2PAK |
More Detail: | P-Channel 60V 55A (Tc) 3.75W (Ta), 125W (Tc) Surfa... |
DataSheet: | SUM55P06-19L-E3 Datasheet/PDF |
Quantity: | 2400 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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SUM55P06-19L-E3 is a type of surface mount power MOSFET, featuring N-channel enhancement mode behavior, low on-resistance, and low gate charge. It is integrated into a single package which contains all the necessary components for operation and is designed to minimize the space requirement for applications. This type of MOSFET offers excellent performance in power supply and suspension systems as well as in telecommunications and lighting applications.
The primary application field for the SUM55P06-19L-E3 MOSFET is power supply and suspension systems. This type of MOSFET is known for its high levels of efficiency and reliability, making it the ideal choice for supplying power to critical systems. In addition, the device can help reduce energy consumption, thus leading to cost savings in some applications. Moreover, it provides excellent thermal performance and is suitable for operation at high temperatures.
The working principle of the SUM55P06-19L-E3 MOSFET is based on the principle of electron tunneling. This phenomenon takes place when electrons pass through the gate oxide layer of the MOSFET, allowing them to flow between the source and drain. When the gate voltage is increased, the current flow through the device is increased, thus resulting in an increase in the power output. On the other hand, when the gate voltage is reduced, the current flow through the device is reduced, thus resulting in a decrease in the power output.
Apart from power supply and suspension systems, the SUM55P06-19L-E3 MOSFET is also ideal for use in communications and lighting applications. It is an efficient device that is capable of providing precise and reliable control over the amount of power delivered to the system. This is why the device is highly recommended for use in applications where high levels of precision and accuracy are required. In addition, the device is also highly suitable for use in low-power applications where low current consumption is desired.
In conclusion, the SUM55P06-19L-E3 MOSFET is a versatile and highly reliable device designed for a wide range of applications. It is based on the principle of electron tunneling and is capable of providing precise and reliable control over the amount of power delivered to the system. It is also highly suitable for use in power supply and suspension systems, communications and lighting applications, and low-power applications. This makes the device an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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