SUM50N06-16L-E3 Discrete Semiconductor Products

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The SUM50N06-16L-E3 transistor is the latest addition to ST Microelectronics\' portfolio of power MOSFETs. It is an efficient, low-conductance, low-voltage device that can be used in a wide range of applications. It is a single-level high side switch with an integrated gate driver, and its P-channel MOSFETs (PMOS) are optimized for extremely low off-state leakage current, making it suitable for energy-constrained applications, such as battery-driven automotive and consumer electronics, power supplies, and other mobile applications.The SUM50N06-16L-E3 utilizes a vertical structure to minimize the on-resistance while simultaneously allowing a large area for the heat sink. This results in improved heat dissipation capabilities, allowing the MOSFET to work at higher power levels without overheating. The device is constructed using a TOR (top-of-ring) gate structure, which further reduces on-resistance and improves switching performance.The SUM50N06-16L-E3 is designed to operate at as low a gate voltage as possible, in order to minimize power loss. The device has a gate drive voltage of 4.5V, which is significantly lower than many other power MOSFETs on the market. This allows for better switching performance and improved efficiency in applications that require low gate voltage.The device also features integrated protection structures such as ESD protection, thermal overload protection, and overvoltage protection, to ensure reliable and robust operation. The integrated gate driver allows for easy operation and rapid switching speeds, making it suitable for high-speed applications.In addition, the device has an adjustable current limiting feature, which is useful for applications requiring precise current control. The device also features a fast turn-on and turn-off capability, and is capable of handling large capacitive load.The SUM50N06-16L-E3 is an ideal solution for a variety of applications, such as power supplies, motor drives, automotive systems, HVAC systems, lighting systems, battery-operated devices, and instrumentation and control systems. Its low on-resistance, low voltage capabilities and integrated protection structures make it a reliable and cost-effective option for many power-sensitive applications.

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