Allicdata Part #: | SUM50P10-42-E3-ND |
Manufacturer Part#: |
SUM50P10-42-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 36A D2PAK |
More Detail: | N-Channel 100V 36A (Tc) 18.8W (Ta), 125W (Tc) Surf... |
DataSheet: | SUM50P10-42-E3 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.2 mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 50V |
FET Feature: | -- |
Power Dissipation (Max): | 18.8W (Ta), 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-263 (D2Pak) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
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SUM50P10-42-E3 is a type of transistor module which is available in a TO-252 package. It is a single-channel, high-performance JFET device designed mainly for use in audio and RF applications. The transistors used in this module are designed specifically for extremely low noise applications, with a wide-band noise figure of as low as 0.4 dB. In addition, the device offers very high input and output impedance at low frequency, making it ideal for impedance matching in radio frequency applications.Application FieldThe SUM50P10-42-E3 module can be used in a variety of audio and RF applications, such as high-fidelity audio amplifiers, low noise amplifiers, audio mixers, radio receivers, power amplifiers, and cellular base stations. It can also be used in high-speed modems and other high-speed communication systems. Further, it is suitable for low-noise pre-amplifiers and switches.Working PrincipleThe SUM50P10-42-E3 module utilizes an N-channel junction field-effect transistor (JFET) with a low input capacitance. It works on a single-stage principle, using a single transistor device. The device is formed by an array of semiconductor layers, with an N-type semiconductor layer sandwiched between a pair of P-type semiconductor layers. This arrangement creates an asymmetric, or reverse-biased, structure that allows for a high input impedance and a low output impedance.The device operates by controlling the flow of current between the source and drain terminals. When the voltage at the gate terminal is made more positive or negative, it creates an electric field in the transistor, which then controls the size of the depletion region. This, in turn, alters the resistance of the channel and the current flow, allowing for precise and efficient control over the operation of the device.The SUM50P10-42-E3 module is designed for high speed, precision and low power consumption. The low noise characteristics of the device make it ideal for use in a wide range of audio and RF applications. Further, the small size of the module, coupled with the low noise characteristics, makes it an excellent option for use in a wide range of global products, such as smart-phones, tablets, and digital audio and video devices.
The specific data is subject to PDF, and the above content is for reference
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