Allicdata Part #: | SUP40N10-30-E3-ND |
Manufacturer Part#: |
SUP40N10-30-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 40A TO220AB |
More Detail: | N-Channel 100V 40A (Tc) 3.75W (Ta), 107W (Tc) Thro... |
DataSheet: | SUP40N10-30-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 107W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The SUP40N10-30-E3 is a N-channel enhancement-mode power field-effect transistor (FET). It is designed for high-power switching and linear applications, as well as for high-side switching and load switching in automotive applications. This device has a low on-resistance, is fast and easy to use, and has a rugged design that withstands voltage shocks and transient signals.
The use of FETs in power applications allows for a highly efficient power transfer allows for smaller system size and faster response times over traditional mechanical switching systems. They can be used to control systems including power supplies, motor drives, switchmode power converters and high-side switch systems. The SUP40N10-30-E3 is particularly suited for these types of applications and provides an excellent solution for controlling higher currents, shorter rise times and faster switching time.
The working principle of the SUP40N10-30-E3 is based on a metal–oxide–semiconductor structure. It utilizes an insulated-gate FET (IGFET) to control the current flowing through the device. When a positive voltage is applied to the gate terminal, the gate voltage increases and creates a high electric field between the gate and the source. This electric field attracts electrons from the semiconductor material, turns on the transistor and allows the current to flow. When the gate voltage is removed, electrons are removed from the gate and the current is stopped.
The SUP40N10-30-E3 is able to quickly switch between on and off states, making it ideal for high-speed applications. It also offers superior power efficiency, allowing for higher current ratings and faster switching speeds. Additionally, this device is well suited to applications with high-common-mode transients, due to its robust ESD protection levels.
The SUP40N10-30-E3 is an excellent choice for power switching and linear applications, offering excellent power efficiency and reliability. Its low on-resistance, fast switching times and rugged design make it an ideal solution for automotive and high-side switching applications. This device offers the performance, flexibility and robust protection making it an attractive solution for these types of applications.
The specific data is subject to PDF, and the above content is for reference
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