SUP45P03-09-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUP45P03-09-GE3 is an n-channel enhancement mode MOSFET device that is specifically designed for high current switching and linear applications. It is an excellent choice for power control and power management applications. This device can be used in a variety of applications, ranging from simple power control applications to more complex linear applications.

The SUP45P03-09-GE3 has an extremely low on-state resistance, which makes it a great choice for applications that require power switching. The on-state resistance helps minimize switching losses, thereby resulting in improved power efficiency. Additionally, it has a low input capacitance and a fast switching speed, which ensures fast switching operations and improved performance in switching applications. Furthermore, its high current carrying capability makes it suitable for applications with high current switching requirements.

The SUP45P03-09-GE3 is a MOSFET device with an enhanced structure that is specifically designed to deliver superior performance in high current switching applications. This device uses an optimized design to provide superior on-state resistance over a wider range of conditions. Additionally, its power handling and protection capabilities are enhanced to provide improved performance in high current applications. This device is also designed to provide superior noise immunity, which is essential for high frequency switching applications.

The working principle of the SUP45P03-09-GE3 is based on the principle of MOSFET technology. The MOSFET is a three-terminal device that produces an output voltage across the drain and source terminals when a small voltage is applied to the gate terminal. In simple terms, the device consists of a source, drain, and gate terminal that are used to control the flow of current between the source and drain terminals.

The device works by using an electric field between the source and drain terminals to control the flow of current between them. This electric field is generated by applying a voltage to the gate terminal, which in turn controls the resistance between the source and drain terminals. This changing resistance, known as the transistor\'s gain, is used to control the flow of current between the source and drain terminals.

Another key feature of the SUP45P03-09-GE3 is its high input impedance, which makes it well suited for use in applications such as linear and power amplification. This feature allows for minimal signal loss when used in these applications. Additionally, this device is highly reliable, making it a great choice for applications requiring high levels of reliability.

Overall, the SUP45P03-09-GE3 is an excellent choice for a variety of applications, ranging from simple power control to more complex linear and power amplification applications. Additionally, its high current carrying capability, fast switching speed, low on-state resistance, and high input impedance make it well suited for these applications.

The specific data is subject to PDF, and the above content is for reference