Allicdata Part #: | SUP40P10-43-GE3-ND |
Manufacturer Part#: |
SUP40P10-43-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 36A TO220AB |
More Detail: | P-Channel 100V 36A (Tc) 2W (Ta), 125W (Tc) Through... |
DataSheet: | SUP40P10-43-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta), 125W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4600pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 160nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 43 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SUP40P10-43-GE3 is a single-channel high-performance power FET (Field Effect Transistor) from STMicroelectronics. As with most FETs, it is specifically designed for high-frequency applications.
The SUP40P10-43-GE3 operates with a 160 Vgs gate-source voltage and a 10 A drain current. It is a 1.6Ohm device with very low gate charge and has a very low on-resistance per unit area, which makes it an ideal choice for power applications needing over 10 A drain current. The SUP40P10-43-GE3 also offers very low gate-source capacitance, a low gate charge and a fast switching speed, making it ideal for applications such as motor drive, telecom, and portable device power switching.
The operating principles of the SUP40P10-43-GE3 can be broken down into four main components: source, drain, gate, and substrate. The source is the terminal where current is fed into the FET, while the drain is the terminal from which current exits the FET. The gate is the control element, and the substrate serves as insulation between the source and the drain. When a voltage is applied to the gate, a channel is created between the source and the drain which allows for current to flow from the source to the drain. This is called an "on state" in which current is allowed to flow between the source and the drain. Conversely, if no voltage is applied to the gate, the FET is in the "off state" wherein no current will flow from the source to the drain. The SUP40P10-43-GE3\'s low gate capacitance helps to minimize losses associated with using a high gate voltage, which is a common requirement when using FETs.
The SUP40P10-43-GE3\'s fast switching speeds allow it to respond quickly to changes in gate voltage, making it suitable for high-frequency switching applications. It is also very efficient in power switching applications, as the high operating frequency minimizes losses associated with gate charge. The low on-resistance per unit area also helps reduce total energy consumption as well as switching losses. Lastly, the low gate charge makes it an ideal choice for high-current applications since it helps reduce switching losses caused by gate charge.
In summary, the SUP40P10-43-GE3 is a single-channel high-performance power FET from STMicroelectronics. It operates with a 160 Vgs gate-source voltage, 10 A drain current, 1.6Ohm on-resistance per unit area, and has very low gate charge and gate-source capacitance. The SUP40P10-43-GE3 is ideal for applications such as motor drive, telecom, and portable device power switching due to its low gate charge and fast switching speeds, and is also an excellent choice for high-current applications due to its highly efficient power switching abilities. With its superior performance capabilities and efficiency, the SUP40P10-43-GE3 is an excellent choice for a wide variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SUP40N10-30-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 100V 40A TO22... |
SUP40N10-30-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 100V 38.5A TO... |
SUP40P10-43-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 36A TO22... |
SUP45N03-13L-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 45A TO220... |
SUP40N25-60-E3 | Vishay Silic... | 4.04 $ | 290 | MOSFET N-CH 250V 40A TO22... |
SUP40010EL-GE3 | Vishay Silic... | 2.37 $ | 475 | MOSFET N-CH 40V 120A TO22... |
SUP45P03-09-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 30V 45A TO220... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...