Allicdata Part #: | SUP40N25-60-E3-ND |
Manufacturer Part#: |
SUP40N25-60-E3 |
Price: | $ 4.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 250V 40A TO220AB |
More Detail: | N-Channel 250V 40A (Tc) 3.75W (Ta), 300W (Tc) Thro... |
DataSheet: | SUP40N25-60-E3 Datasheet/PDF |
Quantity: | 290 |
1 +: | $ 3.67290 |
10 +: | $ 3.27852 |
100 +: | $ 2.68827 |
500 +: | $ 2.17684 |
1000 +: | $ 1.83588 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.75W (Ta), 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 5000pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 140nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 60 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SUP40N25-60-E3 is a type of single field-effect transistor (FET), a type of power semiconductor device that is widely used in modern devices. It belongs to the N-channel enhancement-mode MOSFET family, featuring a large current-handling capability and an On-State resistance of 0.25 ohm. Generally speaking, it is used in many applications like switching, amplifying or otherwise controlling power delivery.
The main working principle of the SUP40N25-60-E3 is based on the MOS capacitor, which is composed of a metal oxide layer between two semiconductor layers. This metal oxide layer is a dielectric and can be used to modify the conductivity of the semiconductor layers. The manner in which this is done is by affecting the voltage of the controlling gate. By applying an appropriate voltage, an electrical field is set up within the channel region, allowing the control of current flow passing through the channel.
The unique characteristics of this power semiconductor device are due to its use of n-channel enhancement-mode technology, which ensures that its On-State resistance remains low whilst still providing excellent pass-gate characteristics. Additionally, its maximum drain-source voltage of 40V and maximum temperature of 175 ˚C gives it an excellent performance in terms of both power efficiency and heat dissipation.
The SUP40N25-60-E3 can be used in a wide range of applications such as switching amplifiers or in variable speed control devices. It is also commonly used to control the output of DC-DC converters and as power management switches in modern electronic equipment. Furthermore, it can also be used in a variety of analog and digital circuit designs, such as in voltage followers or in current mirrors, as these circuits require improved switching and higher frequency operations.
Due to its superior performance and extensive application field, the SUP40N25-60-E3 has become popular among those involved in device design, system control, and other related fields. Its performance and reliability makes it a top choice for many projects. Furthermore, its small size and low cost make it an attractive option, as it is easy to work with and maintain.
The specific data is subject to PDF, and the above content is for reference
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