Allicdata Part #: | SUP40N10-30-GE3-ND |
Manufacturer Part#: |
SUP40N10-30-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 100V 38.5A TO220AB |
More Detail: | N-Channel 100V 38.5A (Tc) 3.1W (Ta), 89W (Tc) Thro... |
DataSheet: | SUP40N10-30-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 89W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 30 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 38.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Description
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The SUP40N10-30-GE3 is a type of Field Effect Transistor (FET) which belongs to the category of Single MOSFETs. It features a low on-resistance which, combined with its fast switching capabilities, makes this device an ideal choice for numerous applications. In this article, we’ll take a look at the application fields and working principle of the SUP40N10-30-GE3.The SUP40N10-30-GE3 is a popular choice in power electronics applications. It can be used to construct power supplies, DC-DC converters, inverters and motor drives. The device is also highly suitable for switching applications, such as those found in communications equipment. This is due to its low on-resistance and fast switching speeds, allowing for efficient power transfer.In addition, the SUP40N10-30-GE3 can be used as a solid state relay. Its fast switching speed and low on-resistance make this device a good substitute for traditional electromechanical relays. It provides improved longevity and performance, which makes it suitable for industrial switching applications.The device is also suitable for battery operated applications, such as those found in portable electronic devices. Its fast switching speeds allow it to reduce power losses during states of low load current, thereby increasing battery life. This makes it ideal for applications such as mobile phones, tablets, and portable gaming devices.The working principle of a Field-Effect Transistor (FET) is as follows: A voltage is applied to a control electrode, also known as the gate. This, in turn, causes a current to flow from the drain to the source. This current is proportional to the voltage applied to the gate, and is impacted by the resistance between the drain and source.In the case of the SUP40N10-30-GE3, the on-resistance is quite low, allowing for efficient power transfer and fast switching speeds. This makes the device ideal for numerous applications, from motor drives and power supplies to portable devices and battery operated applications.In conclusion, the SUP40N10-30-GE3 is a Single MOSFET which offers fast switching capabilities and a low on-resistance. This makes it a popular choice in numerous power electronics applications, such as power supplies, inverters, DC-DC converters and motor drives. It can also be used as a solid state relay, as it provides improved longevity and performance. In addition, the device is suitable for battery operated applications, as its low on-resistance and fast switching speeds can increase battery life. The working principle of the device is based on a voltage applied to the gate, which in turn causes a current to flow from the drain to the source.
The specific data is subject to PDF, and the above content is for reference
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