SUP50020E-GE3 Allicdata Electronics
Allicdata Part #:

SUP50020E-GE3-ND

Manufacturer Part#:

SUP50020E-GE3

Price: $ 2.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 120A TO220AB
More Detail: N-Channel 60V 120A (Tc) 375W (Tc) Through Hole TO-...
DataSheet: SUP50020E-GE3 datasheetSUP50020E-GE3 Datasheet/PDF
Quantity: 395
1 +: $ 2.13570
10 +: $ 1.90701
100 +: $ 1.56391
500 +: $ 1.26641
1000 +: $ 1.06806
Stock 395Can Ship Immediately
$ 2.35
Specifications
Series: TrenchFET®
Packaging: Cut Tape (CT) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 128nC @ 10V
Vgs (Max): ±20V
FET Feature: --
Power Dissipation (Max): 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Description

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SUP50020E-GE3 Application Field and Working Principle

The SUP50020E-GE3 is a high side N-channel enhancement mode MOSFET with an integrated driver, designed to be used in automotive engine control applications. By combining a power and driver in one package, the SUP50020E-GE3 is ideal for cost Reduction and space savings, also improving performance and reliability.

The SUP50020E-GE3 is a logic-level MOSFET with a breakdown voltage of 25 V and an RDS(on) of 5.6 mΩ at 4.5V drain-source voltage. It features a rugged design for robust operation and enhanced thermal performance. The integrated driver offers a low turn-on voltage, fast switching speed and low power dissipation.

Working Principle

The working principle of the SUP50020E-GE3 is based on the principle of field-effect transistor (FET) operation. A FET is a transistor-like semiconductor device that uses a voltage or current on its gate to control the conductivity of a channel, which is formed between the source and drain terminals of the device. The SUP50020E-GE3 operates in the enhancement mode, in which the device is off below the threshold voltage and on when the gate voltage is above the threshold voltage.

The SUP50020E-GE3 can be used in both DC and AC applications. When used in DC applications, the SUP50020E-GE3 can be used as an electrically controlled switch. The voltage applied to the gate of the device controls whether current flows from the source to the drain terminal, allowing it to be used to switch DC and low frequency AC currents on and off.

The SUP50020E-GE3 features an integrated driver, which provides a maintained voltage to ensure the FET operates in the enhancement mode. The integrated driver also has protection features to ensure safe operation and prevent potential damage to the FET from excessive current.

The SUP50020E-GE3 is suitable for automotive engine control applications. It is capable of switching high levels of current, allowing it to control fuel injectors, spark plugs, fuel pumps, and exhaust valves. In addition, the integrated driver provides a low on-resistance, fast switching and low power dissipation, making it suitable for high frequency pulsed switches and variable current sensing applications.

The SUP50020E-GE3 is a versatile, robust and cost-effective device that is well-suited to automotive engine control applications. It offers a combination of on-resistance, switching speed, power dissipation and protection features, making it an ideal choice for many automotive applications.

The specific data is subject to PDF, and the above content is for reference

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