SUP50020EL-GE3

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A field effect transistor (FET) is a three-terminal semiconductor device in which current is controlled by the electric field of a gate. SUP50020EL-GE3 is a single N-Channel enhancement mode field-effect transistor (FET) with very low Rdson. It is designed to be used in DC/DC converter, power management and power switching applications.

Features:

• Very low Rdson
• Low-voltage operation
• Top-side gate for optimized routing
• Integrated gate protection
• Halogen-free, RoHS compliant

Applications:

• DC-DC Converter
• Power Management and Regulation
• Power Switching

Working Principle:

The SUP50020EL-GE3 contains an N-Channel Metal-Oxide Silicon (MOS) gate field-effect transistor, providing very low on-resistance and offset. The device also has an integrated gate protection circuit, which prevents gate to source over-voltage in applications with large transients. The top-side gate provides optimized routing while an exposed backside pad helps heat dissipation.

The device utilizes an enhancement-mode gate structure with an internal drain-source diode. When a positive voltage is applied to the gate relative to the source, the channel is created between the drain and the source, with the channel width and length determining the RDSon of the device. Current flows from the drain to the source with an effective RDSon determined by the gate, source, drain and channel characteristics.

The RDSon of the device increases with channel temperature, and is low enough to allow for good thermal dissipation. The device is able to switch at a much higher frequency compared to bipolar equivalents, and dissipates very low switching losses. The device is also well suited for ultra-low standby power applications, because of its low leakage current.

The integrated gate protection circuit provides robust protection against over-voltage transients and keeps the gate at a safe voltage level. This protection can ensure that the device is not damaged during transient conditions. The top-side gate is optimized to provide better routing and the exposed backside pad helps dissipate heat more efficiently.

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