SUP53P06-20-GE3

Series:	TrenchFET®
Packaging:	Tube
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	9.2A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	19.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	115nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3500pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.1W (Ta), 104.2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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SUP53P06-20-GE3 Application Field and Working Principle

IntroductionThe SUP53P06-20-GE3 is a Power MOSFET device manufactured by Infineon Technologies AG. It is part of the SUP53P06-E family consisting of a range of generation 6 Power MOSFETs designed to provide superior power handling ability in high voltage scenarios whilst maintaining excellent switching speed, low on-state resistance and high robustness. Application Field The SUP53P06-20-GE3 is designed to provide reliable operations in a wide range of applications. As a standard level FET it has commonly been used to power electrical motors, compressors and cooling fans in a wide range of household appliances. In industrial applications, the device is well suited for high-end power supply, lighting control, and industrial automation settings. In automotive and transportation applications, the SUP53P06-20-GE3 can be used for current and power control, HVAC solutions, power window systems, EPS and/or DC/DC converters. In PFC settings, the device is well suited to provide power to SMPSs, PC and HDTV power supplies, and is ideal for LEDs, in particular when it comes to multi-channel lighting solutions. Working Principle The SUP53P06-20-GE3 is based on a standard level Field Effect Transistor (FET) design. Its construction is made up of three parts; the Gate, the Drain, and the Source. When the Gate is not connected, no current can flow and the voltage at the Drain and the Source is equal. When the Gate is activated, it creates an electric field that moves electrons from the Drain to the Source. This electric field enables the flow of current from the Drain to the Source. This is known as the \'On\' state.The resistance between the Drain and the Source is known as the On-State Resistance. The lower the on-state resistance, the faster the switching time. The SUP53P06-20-GE3 has an extremely low On-State Resistance (RDSon) of 34.3mΩ, making it ideal for high-voltage, high-current applications.The Gate Voltage (VGS) of the SUP53P06-20-GE3 is 20V, which is higher than most FETs on the market, giving it a wider range of applications. ConclusionThe SUP53P06-20-GE3 is a standard level FET designed by Infineon Technologies AG to provide superior power handling in high voltage applications whilst still offering excellent switching speed, low on-state resistance and high robustness. It is well suited for a wide range of applications in industrial, transportation and consumer electronics. Its low On-State Resistance (RDSon) of 34.3mΩ, high Gate Voltage (VGS) of 20V and compact package make it an ideal choice for high voltage, high current and multi-channel applications.

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