SUP50N10-21P-GE3

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A SUP50N10-21P-GE3 device is an enhanced N-channel Field-effect Transistor (FET). It is well known for its functionalities, features, specifications and applications. Field-effect transistors (FETs) act as switches or amplifiers in electrical circuits.

The SUP50N10-21P-GE3 device is a normally-off type. It has an operating drain-source voltage (VDS) of 50V (Max), a maximum drain current of 3.5A, and a minimum on-state resistance (RDSon) of just 1.2Ohms (@VGS=10V). It also provides an anti-parallel diode which is ideal to protect the device from potential damage when the device is under high reverse current. The maximum junction temperature and the storage temperature range is 175°C and -55°C to +175°C respectively.

The SUP50N10-21P-GE3 device is suitable for use in a variety of applications, from high-power audio apps to switching power supplies. It can be used to drive motors, LEDs, lamps and other medium- to high-power loads. The device also features a low turn-on threshold voltage (VGS(th) = 4V) and threshold voltage temperature coefficient that is low enough to help reduce power consumption in switching power supplies, motor drives and consumer electronics.

The SUP50N10-21P-GE3 device is characterized by the gate-coupled conduction mechanism and Gate Charge, which is an accumulation of the charge stored on the Gate and the charge transferred when VGS is rising linearly. It is further characterized by its Pin-to-Pin voltage matching, which defines the gate-source voltage between any two pins in a multiple pins package with same gate-source voltage applied.

The SUP50N10-21P-GE3 device also has an All-Parallel-Diode protection diode feature. This feature ensures that, when the device is under reverse current, the anti-parallel diode in the integrated circuit will limit the voltage. The All-Parallel-Diode feature also helps reduce EMI noise and improve system reliability.

The working principle of the SUP50N10-21P-GE3 lies in its P-channel field-effect transistors, which are p-type semiconductor devices used for various kinds of electrical switching and amplification functions. FETs are active devices that can control the electrical current flowing through them. FETs are made from two or more terminal electrodes or pins – the gate, source, and drain.

The operation of the FET is based on the application of voltage to the terminal. The voltage applied to the gate terminal creates an electric field, which controls the resistance of the channel between the source and drain. This electric field acts as a valve between the source and drain, where the resistance of the channel can be varied by varying the applied voltage.

The SUP50N10-21P-GE3 FETs are mainly based on the application of the voltage to the terminal and the electric field controlling the output resistance of the channel between the source and drain. When a voltage is applied to the gate terminal, the electric field produced controls the current by controlling the width of the channel. This width control is responsible for the control over the output resistance of the device.

The main application of the SUP50N10-21P-GE3 FET is in power switching circuits. It can be used in high-frequency applications and it has high temperature and pulse handle capability. This makes it ideal for use in diesel engine control systems, high-power electronic equipment, power supplies, and solar modules. It is also suitable for AC/DC converters, UPS systems, power factor correction and transducer applications.

In summary, the SUP50N10-21P-GE3 device is a field-effect transistor that is suitable for use in a variety of applications, from high-power audio to switching power supplies. It is characterized by its Gate Charge, Pin-to-Pin voltage matching, low turn-on threshold voltage, and All-Parallel-Diode protection features. It is mainly used for power switching circuits, making it ideal for use in a wide range of applications.

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