SUP53P06-20-E3

Series:	TrenchFET®
Packaging:	Tube
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	9.2A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	19.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	115nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3500pF @ 25V
FET Feature:	--
Power Dissipation (Max):	3.1W (Ta), 104.2W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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<p>The SUP53P06-20-E3 is a power MOSFET, a type of transistor that is used to control the flow of electricity in different types of electronic applications. It is designed to provide efficient switching matrices and is most commonly used in power supplies and motor drives. This article will discuss the application field and working principle of the SUP53P06-20-E3.</p><p><strong>Application Field</strong></p><p>The SUP53P06-20-E3 is suitable for many types of applications, particularly those involving high currents and/or high voltages. It can be used as an electronic switch in order to control the flow of power in various types of applications, including power supplies, motor drives, and other high-current devices. The SUP53P06-20-E3 is designed to offer a low impedance, high-maximum wattage junction. This allows for efficient current and voltage control. Additionally, the SUP53P06-20-E3 is designed to be both cost effective and reliable in operation.</p><p><strong>Working Principle</strong></p><p>The SUP53P06-20-E3 is an enhancement-mode power MOSFET. This type of transistor is based on the principle of field-effect transistor (FET) technology and operates using a voltage-controlled gate. To switch on, the gate of the SUP53P06-20-E3 is supplied with a positive voltage that is suitable to the voltage-of-breakdown rating of the device. This positive voltage, known as the gate-source voltage, attracts the electrons which, in turn, cause the drain-source current to flow and switch the device on. To switch off, the gate of the SUP53P06-20-E3 is supplied with a negative voltage (ground) to ensure the device is switched off.</p><p>The SUP53P06-20-E3 also has a low on-state resistance, meaning it can pass high currents when switched on. This makes it ideal for use in applications that require high-current switching. Additionally, the SUP53P06-20-E3 has a maximum drain-source breakdown voltage rating of 20V. This allows the device to be used in higher voltage applications.</p><p><strong>Conclusion</strong></p><p>The SUP53P06-20-E3 is a power MOSFET that is used in many different types of applications. It can be used to efficiently control the flow of power in high-current and high-voltage applications. The SUP53P06-20-E3 is designed with a gate-source voltage system, low on-state resistance, and a maximum drain-source breakdown voltage rating of 20V. All of these features make the SUP53P06-20-E3 a reliable and cost-effective choice for power applications.</p>

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