TIP112 TIN/LEAD Allicdata Electronics
Allicdata Part #:

TIP112CS-ND

Manufacturer Part#:

TIP112 TIN/LEAD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS NPN 100V TO220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 25...
DataSheet: TIP112 TIN/LEAD datasheetTIP112 TIN/LEAD Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
Transistor Type: NPN - Darlington
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Frequency - Transition: 25MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Description

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The TIP112 is a high-power, NPN silicon Darlington transistor designed for general-purpose amplifier and switching applications. It features a maximum collector-emitter voltage of 80V and a continuous collector current of 3A. This transistor can efficiently amplify low-level signals in order to provide large amounts of power.

The TIP112 is used in a wide variety of applications, including audio amplifiers, motor control, and interface relays. This device is also used to amplify low-level current signals, controlling large volumes of current. For example, the TIP112 is often used to regulate the speed of motors to provide a smooth and consistent performance.

The TIP112 is composed of two integrated transistors within one single package. This dual-transistor structure is an extremely efficient way to get multiple amplifiers in one component. The transistor’s gain is relatively high due to its Darlington structure, meaning each transistor amplifies the current of the preceding one so the total current gain of both transistors is much higher than a single one.

The TIP112 also features a TIN/LEAD design. This technology utilizes two materials to construct the transistor. The TIN offers superior electrical and thermal conductivity, while the LEAD allows for lower cost and more design flexibility. This design makes the TIP112 an ideal choice for those looking for an affordable and effective transistor for their applications.

The TIP112 has a simple working principle similar to other transistors. The input signal is applied at one of the base terminals and is amplified at the other base terminal. This amplified signal is then outputted at the collector terminal, providing a large amount of current. Unlike other transistors, the TIP112 is a current gain device, meaning it amplifies the amount of current and not the voltage.

The TIP112 transistor is widely used in various applications, due to its efficiency and robust design. It offers superior performance, reliability and cost efficiency compared to other transistors. With its TIN/LEAD construction, it is able to provide high current for a wide range of applications, making it an all-around excellent choice for general-purpose power amplification.

The specific data is subject to PDF, and the above content is for reference

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