Allicdata Part #: | TIP117CSC-ND |
Manufacturer Part#: |
TIP117 PBFREE |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS NPN 100V TO220 |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 100V 25... |
DataSheet: | TIP117 PBFREE Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max): | 100V |
Vce Saturation (Max) @ Ib, Ic: | 2.5V @ 8mA, 2A |
Current - Collector Cutoff (Max): | 1mA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 1000 @ 1A, 4V |
Frequency - Transition: | 25MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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Bipolar junction transistor (BJT) is a three terminal semiconductor device that is widely used in electronic circuit applications. It is usually designated as a single-transistor device due to the similarity between its pin assignments and that of a single transistor. The major difference between a single transistor and a BJT is that the latter contains two current carrying terminals (i.e., collector and emitter) separated by a base. The collector and emitter are typically made of N-type and P-type doped semiconductor material respectively.
TIP117 PBFREE is a type of single-transistor PNP junction transistor. It is specially designed for applications where high speed switching, low power consumption and high surge currents are required. It consists of an N-type substrate, P-type emitter layer, collector layer and a base layer. The emitter layer is made up of N-type doped semiconductor material, while the collector layer is made up of P-type doped material. The base layer is made up of a thin layer of P-type doped material, which acts as a gate between the emitter and collector layers and controls the current flow from the emitter to the collector. The PBFREE designation is given due to the fact that its construction does not involve the use of a lead-based material.
The working principle of the TIP117 PBFREE is based on the representation of the current flow between the emitter and the collector, when a base current is applied. The circuit symbols for the TIP117 PBFREE are shown in Figure 1. When a small current is introduced through the base, it creates a potential difference between the emitter and the collector. This potential difference is larger than the built-in potential barrier, thus causing the current to flow from the emitter to the collector. The amount of current flow is proportional to the amount of base current applied. As the base current increases, the emitter-collector current increases.
The TIP117 PBFREE is most commonly used in switching and amplifier applications. Its high current carrying capacity, low on-state voltage drop, and high switching speed make it ideal for these applications. The TIP117 PBFREE can be used as a switch by driving the base current to turn it on and off. It can be used as an amplifier by driving the base current, which in turn increases the voltage at the collector, thus amplifying the input signal. The TIP117 PBFREE also has a wide range of power dissipation ratings, so it is suitable for a variety of applications.
In conclusion, the TIP117 PBFREE is a type of single-transistor PNP junction transistor that is specially designed for applications requiring high speed, low power consumption, and high surge currents. Its working principle is based on the concept of current flow between the emitter and the collector. It can be used for a wide variety of applications, such as switches and amplifiers, due to its high current carrying capacity, low on-state voltage drop, and high switching speed. With its wide range of power dissipation ratings, it is suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
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