TIP116G Allicdata Electronics
Allicdata Part #:

TIP116G-ND

Manufacturer Part#:

TIP116G

Price: $ 0.49
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP DARL 80V 2A TO-220AB
More Detail: Bipolar (BJT) Transistor PNP - Darlington 80V 2A ...
DataSheet: TIP116G datasheetTIP116G Datasheet/PDF
Quantity: 840
1 +: $ 0.44730
10 +: $ 0.39627
100 +: $ 0.30379
500 +: $ 0.24013
1000 +: $ 0.19210
Stock 840Can Ship Immediately
$ 0.49
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP - Darlington
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: TIP11*
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TIP116G is considered a general-purpose NPN power transistor. It is a part of a wide range of field-effect transistor (FET) and bipolar junction transistors (BJT) designs. The device combines an N-channel enhancement MOSFET with an NPN power transistor. This particular device is mainly used for higher-power switching applications and can also be used to acquire higher-power amplification.

The TIP116G is used in a number of applications, particularly in those that require some amount of power or logic switching. As the device is a general-purpose NPN power transistor, it can be used for applications such as audio amplifiers, voltage amplifiers, relay drivers, motor drivers, relays and more. Its efficiency allows it to achieve higher-power switching in applications where other transistors would not be capable of doing so.

The TIP116G is a three-terminal device, with its full package being comprised of four pins (G, S, B and E). It has a maximum dissipating power of 40W, a collector-current of 10A and a collector-emitter voltage of 80V. Furthermore, the AC gain is characterised between 100 and 400 and the transition frequency is typically 350MHz.

The device works primarily based on the principle of bipolar junction transistors, i.e. using the presence of a base-emitter junction, a base-collector junction, and a control element (base) to separate the two junctions. The base pin is used to control the flow of current. When current flow is applied through the transistor’s base, it allows the current to flow from the collector to the emitter. This current flow is called ‘forward bias’.

In normal operation, the amount of current that is flowing from the collector to the emitter is determined by the current flowing through the transistor’s base and the ratio known as the current gain. This ratio is commonly known as hfe (or hfe). The larger the hfe, the greater the amount of current that can flow through the device. The TIP116G offers an hfe range of 25-100.

Furthermore, the TIP116G has various types of protections, such as an overvoltage protection and an overcurrent protection, which help to provide the device with greater reliability and to avoid any damage due to sudden overvoltage or overcurrent.

In conclusion, the TIP116G is a general-purpose NPN power transistor that can be used for a wide range of applications, particularly those related to higher-power switching and higher-power amplification. It utilises a bipolar junction transistor design and has a maximum dissipating power of 40W, a collector-current of 10A and a collector-emitter voltage of 80V. Furthermore, the device has various overvoltage and overcurrent protections to ensure it is reliable and durable, and can work efficiently under various conditions.

The specific data is subject to PDF, and the above content is for reference

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