TIP122TU Allicdata Electronics
Allicdata Part #:

TIP122TU-ND

Manufacturer Part#:

TIP122TU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 5A TO-220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 5A ...
DataSheet: TIP122TU datasheetTIP122TU Datasheet/PDF
Quantity: 6315
Stock 6315Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: TIP122
Description

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The TIP122TU is a NPN power transistor commonly employed for power switching applications and in electronic circuits. It is designed for use as a general-purpose amplifier and switch, specifically for use in low-power amplification, high-speed switching, and linear applications. It is a member of the TIP series technology family and is made of silicon. Compared to other types of transistors, the TIP122TU offers a higher gain than NPN transistors. This makes it a preferred choice for applications requiring power amplification and high-speed switching.The TIP122TU has a maximum collector current of 7A and a maximum collector-emitter voltage rating of DC 60V. It also has a minimum collector-emitter breakdown voltage rating of 60V. The TIP122TU has an emitter-base breakdown voltage of 6V and a maximum collector-base voltage rating of 60V. It is also highly resistant to reverse emitter-base voltage and has a maximum power dissipation rating of 800mW. The TIP122TU is also characterized by high-frequency performance, low power dissipation and low noise levels.When operating in power switching applications, the TIP122TU employs two complementary transistors, a PNP and an NPN, to control the switching speed. The PNP transistor provides the switching speed and the NPN transistor controls the power dissipation. The PNP transistor provides the switching speed because its electron mobility is higher than that of the NPN transistor. This combination allows for fast switching speeds and reduced power consumption.The TIP122TU has a maximum collector-emitter voltag rating of 60V, making it ideal for a range of applications including voltage regulators, DC motors, and robotic arms. The maximum collector current rating of 7A makes this transistor suitable for low-power applications such as relay switches, transistors, and integrated circuits. This device can also be used as a linear amplifier in applications such as audio amplifiers.The working principle of the TIP122TU is based on the emitter-control effect. The emitter of the device is connected to ground through the emitter resistor. The emitter voltage is then able to control the current flow though the collector-base junction. The base-emitter voltage of the device is responsible for controlling the current gain. The base current flowing into the device controls the collector current. When a signal voltage is applied to the base, it is increased or decreased depending upon the signal’s frequency. This causes the current gain to be decreased or increased as well.In summary, the TIP122TU is a NPN power transistor that is designed for use as a general-purpose amplifier and switch. It is characterized by a maximum collector current rating of 7A, a maximum collector-emitter voltage rating of DC 60V, and a minimum collector-emitter breakdown voltage rating of 60V. The TIP122TU is a low-power amplifier, suitable for low-power applications, and has a maximum power dissipation rating of 800mW. Its working principle is based on the emitter-control effect.

The specific data is subject to PDF, and the above content is for reference

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