TIP102G Allicdata Electronics
Allicdata Part #:

TIP102GOS-ND

Manufacturer Part#:

TIP102G

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN DARL 100V 8A TO220AB
More Detail: Bipolar (BJT) Transistor NPN - Darlington 100V 8A ...
DataSheet: TIP102G datasheetTIP102G Datasheet/PDF
Quantity: 6171
1 +: $ 0.67000
10 +: $ 0.64990
100 +: $ 0.63650
1000 +: $ 0.62310
10000 +: $ 0.60300
Stock 6171Can Ship Immediately
$ 0.67
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 8A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 80mA, 8A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 4V
Power - Max: 2W
Frequency - Transition: --
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Base Part Number: TIP10*
Description

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The TIP102G is a NPN power Darlington transistor with an integrated base-emitter resistor, which simplifies its use in many applications. It features high current gain, wide-bandwidth, and low saturation voltage, making it ideal for use in various analog and power circuits.

The TIP102G is designed for use as a switch in a wide variety of applications, such as motor control, lighting control, and audio power amplifier circuits. It can also be used to amplify low-level signals for use in AC and DC amplifiers. With its high current gain and low saturation voltage, the TIP102G can be used to reduce cost and improve performance in many designs.

The TIP102G is a component made of several layers of p-type and n-type semiconductor material, which are sandwiched together. It features an internal base-emitter resistor of 5k-Ω, which eliminates the need for an external bias resistor in the circuit. The device also has a low reverse-breakdown voltage of 5V, which ensures reliable operation over wide temperature ranges. The device has a maximum collector-emitter voltage rating of 80V and a maximum power dissipation of 15W.

The main component in the TIP102G is the NPN power Darlington transistor, which consists of three sections: a collector, base and emitter. The collector is connected to the positive supply, and the base is connected to the control signal. The collector-base junction is forward-biased when the positive supply exceeds the base bias voltage (VBE). This forward bias voltage creates a high current gain, allowing the TIP102G to operate as a switch.

When the control signal is low, the collector-base junction is reverse-biased and no current can flow through the device. When the control signal is high, the collector-base junction is forward-biased, allowing current to flow through the device and the emitter. The emitter current is amplified by the device\'s high current gain. This amplified current is used to drive circuits or other power devices.

The TIP102G is an excellent device for use in applications that require low voltage and high current capabilities. It is ideal for circuits such as motor control, lighting control, and audio power amplifier circuits. With its high current gain and low saturation voltage, the TIP102G can be used to reduce cost and improve performance in many designs. Furthermore, its integrated base-emitter resistor simplifies the design and implementation of these circuits.

The specific data is subject to PDF, and the above content is for reference

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