TIP120-BP Allicdata Electronics
Allicdata Part #:

TIP120-BP-ND

Manufacturer Part#:

TIP120-BP

Price: $ 0.90
Product Category:

Discrete Semiconductor Products

Manufacturer: Micro Commercial Co
Short Description: TRANS NPN DARL 60V 5A TO-220
More Detail: Bipolar (BJT) Transistor NPN - Darlington 60V 5A ...
DataSheet: TIP120-BP datasheetTIP120-BP Datasheet/PDF
Quantity: 1000
1 +: $ 0.81270
10 +: $ 0.71757
25 +: $ 0.64840
100 +: $ 0.56725
250 +: $ 0.49778
500 +: $ 0.43990
1000 +: $ 0.34729
2500 +: $ 0.32414
5000 +: $ 0.30870
Stock 1000Can Ship Immediately
$ 0.9
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Power - Max: 65W
Frequency - Transition: --
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Base Part Number: TIP120
Description

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TIP120-BP transistors are single transistor devices, classified under Bipolar (BJT) transistors. It is a Darlington transistor, consisting of two NPN transistors, one PNP and one NPN arranged in a specific configuration. It is intended for high current switching applications. It features high switching performance, excellent frequency stability and is easy to implement. It is primarily used in industrial and automotive switching applications, such as in headlights, windshield wipers and electric windows.

In terms of physical appearance, TIP120-BP transistors are available in three packages: TO-220, TO-92 and TO-252. They have a collector-emitter voltage of 60V, a collector-base voltage of 80V, a base-emitter voltage of 1.5V and a power dissipation of 1W. They can handle a continuous collector current of 5A and a peak current of 8A. They also have a frequency response range from DC to 200kHz. As for other properties, the TIP120-BP transistor has a minimum hFE of 1000, a minimum collector-emitter saturation voltage of 1V and a thermal resistance of 40˚C/W.

TIP120-BP transistors are also characterized by their working principle. As mentioned before, because it consists of two transistors in tandem, it is a Darlington transistor. The first transistor, in this case an NPN, is used to amplify the input signal, while the second, in this case a PNP, is used to provide the output current. This configuration makes it possible to switch heavy loads on and off, providing considerable power savings. The NPN transistor is in the active state when its base terminal is low and its collector-emitter voltage is low and the PNP transistor is in the active state when its base terminal is high and its collector-emitter voltage is high.

The two transistors connected together in this way provide higher current and voltage gains than those of a single transistor. This is done by connecting the emitter of the NPN transistor to the base of the PNP transistor, so that the NPN transistor\'s collector current is amplified by the PNP transistor. This amplified current can then be used to control larger loads and provide more power. In addition, the combination of high current gain and high voltage gain allow the TIP120-BP transistor to switch both high and low voltage loads.

In summary, the TIP120-BP transistor is a single transistor device, classified under the Bipolar (BJT) category. It is designed for high current switching applications such as in industrial, automotive, and home automation projects. Its combination of two transistors connected in tandem makes it possible to switch heavy loads on and off as well as provide considerable power savings. It also features high switching performance, excellent frequency stability and is easy to implement.

The specific data is subject to PDF, and the above content is for reference

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