Allicdata Part #: | TIP2955-S-ND |
Manufacturer Part#: |
TIP2955-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS PNP 60V 15A |
More Detail: | Bipolar (BJT) Transistor PNP 60V 15A 3.5W Through... |
DataSheet: | TIP2955-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 15A |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 3.3A, 10A |
Current - Collector Cutoff (Max): | 700µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 4A, 4V |
Power - Max: | 3.5W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-218-3 |
Supplier Device Package: | SOT-93 |
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The TIP2955-S is a power NPN switching transistor component commonly used in amplifying and switching applications. It is a great addition to any analog system, as it is able to provide power amplification for sensitive signals and can provide effective switching for loads that require a certain voltage level. This component is used in many different types of applications and is suitable for a variety of operating conditions. In this article, we\'ll be taking a closer look at the TIP2955-S application field and working principle.
The TIP2955-S is a single NPN transistor component that is designed specifically for use in power switching applications. It is ideal for use in high-frequency switching applications, as its switching time is less than 80 nanoseconds. This component is well-suited for applications like low-voltage switching power supplies, DC-DC converters, transistors drivers, and optocouplers. It can also be employed in logic circuits, as it has a low-on state current.
The TIP2955-S is rated for a maximum collector-emitter voltage of 60 volts and a peak collector current of 8 Amps. The collector-emitter saturation voltage is also low at around 300 mV. It is also able to withstand high temperatures and is rated for use with temperatures up to 150°C.
The working principle of the TIP2955-S is based on the NPN transistor structure. The transistor is composed of three sections: the base, collector, and emitter. In this type of transistor, a layer of doped semiconductor material is sandwiched between two contact layers of opposite conductivity. The thin middle layer is the base, while the outer layers are the collector and emitter. When a positive voltage is applied to the base, it will cause a current to flow between the emitter and the collector. The amount of the current flow is determined by the gain of the transistor, which is the ratio of the collector current to the base current.
The TIP2955-S also incorporates a voltage regulator internally, which can provide stable operating characteristics. The voltage regulator limits the voltage across the transistor and regulates the output current. This helps ensure that the transistor operational characteristics remain consistent over a wide range of temperatures and other environmental changes.
The TIP2955-S is an excellent choice for a wide variety of switching and power amplification applications. It is relatively inexpensive and offers good performance and reliable operation. The device is well-suited for use in commercial and industrial applications and is often found in power supplies, logic circuits, and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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