TIP29F-S

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TIP29F-S is an NPN high- power transistor with Power Dissipation rate of 17W between -65°C to 150°C. It is designed with a stable current gain of at least 50 and a maximum emitter base voltage of 7.0V.

The application field of TIP29F-S include Audio Power Amplifiers for Radio, TV, Hi-Fi Stereo, Intercoms and Telephones. It is also applicable for mid- power drivers like relays, solenoids, lamps, etc. It can be used to construct various low- power switching circuits or power consuming loads.

Working principle of TIP29F-S consists of three parts - Emitter, Base and Collector. By applying voltages at E,B,C electrodes and controlling base current, electron flow between emitter and collector will be varied. High voltage applied at Base will cause voltage drop at Collector, thus current decrease. When Base voltage decrease, voltage drop at Collector will be weakened and current will increase accordingly. By controlling the Base current, the Collector current of TIP29F-S can be precisely adjusted.

The NPN structure of TIP29F-S incorporates a P-type substrate and an N- type diffused buried layer. This provides to the transistor very strong E-B breakdown voltage and an excellent thermal stability. The transistor is micron-grade for compatibility with modern devices featured with high-frequency characteristics due to its low base to emitter impedance and high base to collector impedance.

TIP29F-S features a high peak current gain of 700 and the transistor can handle high current output. It is highly value for its wide range of temperature and highly stability performance. With the help of other components, TIP29F-S is able to provide a greater power output and higher efficiency.

TIP29F-S can be used in high-power, high-frequency and low-power applications since it offers a number of advantages. It has a low saturation voltage, low Ron, a high collector current and a wide operating temperature range. The high power dissipation capability, the the high frequency characteristics and the excellent dynamic performance of TIP29F-S make it suitable for many applications.

In conclusion, TIP29F-S is a high-power, high- frequency and low-power single bipolar transistor and it is applicable for a wide range of application fields. With its excellent thermal stability and low base to emitter impedance, TIP29F-S is capable of producing high power output and withstanding high current output. Its excellent features make it an ideal choice for various applications.

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