Name: TIP29CTSTU
Brand: ON Semiconductor
SKU: TIP29CTSTU-ND
Availability: InStock

Allicdata Part #:	TIP29CTSTU-ND
Manufacturer Part#:	TIP29CTSTU
Price:	$ 0.00
Product Category:	Discrete Semiconductor Products
Manufacturer:	ON Semiconductor
Short Description:	TRANS NPN 100V 1A TO-220
More Detail:	Bipolar (BJT) Transistor NPN 100V 1A 3MHz 2W Throu...
DataSheet:	TIP29CTSTU Datasheet/PDF
Quantity:	1000

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Specifications

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	1A
Voltage - Collector Emitter Breakdown (Max):	100V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 125mA, 1A
Current - Collector Cutoff (Max):	300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 1A, 4V
Power - Max:	2W
Frequency - Transition:	3MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-220-3
Supplier Device Package:	TO-220-3
Base Part Number:	TIP29

Description

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TIP29CTSTU Application Field and Working Principle Bipolar junction transistors (BJT) and field effect transistors (FET) are important tools in the design of circuits and equipment. The TIP29CTSTU is a single NPN bipolar junction transistor (BJT) with a collector-base voltage of 30V, a power dissipation of 0.6W, and a maximum collector current of 0.2A. This transistor is suitable for use in high voltage, low power applications requiring up to 30V base drive. In order to understand the basic principles and applications of a transistor, it is important to understand the device structure, conduction principles, and how to connect the device. The TIP29CTSTU is composed of a P-type semiconductor layer (emitter) and an N-type semiconductor layer (collector). The third layer, known as the base, is a thin layer designed to control the current flow between the emitter and collector. Figure 1 shows the structure and operating principle of a typical BJT. Figure 1(a) shows the PN junction structure of the transistor. In operation, a positive current I_B is applied to the base, which injects holes from the emitter into the base region. Those holes are then drawn away by the negative voltage at the base, resulting in a decrease of the current flowing across the junction. In turn this decreases the small current I_E (I_C) present at the emitter (collector) of the device, causing a change in voltage across the device. By controlling the small base current I_B, the collector current I_C can be controlled. This current can then be used to control the voltage across a load. In this way, BJTs act as current amplifiers, allowing the control of a large current and voltage with a small current input. The TIP29CTSTU can be used for high voltage, low power amplification and switching applications as it is capable of withstanding a collector-emitter voltage of 30V with a low power dissipation.The TIP29CTSTU is suitable for a wide range of analog signal processing applications. For example, it can be used to amplify audio signals, such as those from microphones or similar input sources. The device is also suitable for digital signal processing applications, such as the control of motor speed, switch circuit trigger delays, or for waveform generation. In conclusion, the TIP29CTSTU is a single NPN bipolar junction transistor (BJT) with a collector-base voltage of 30V, a power dissipation of 0.6W, and a maximum collector current of 0.2A. As a result, it is suitable for high voltage, low power applications requiring up to 30V base drive. Furthermore, the device can be used for a wide range of analog and digital signal processing applications.

The specific data is subject to PDF, and the above content is for reference

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TIP29CTSTU-ND

TIP29CTSTU

Discrete Semiconductor Products