Allicdata Part #: | TIP29B-S-ND |
Manufacturer Part#: |
TIP29B-S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Bourns Inc. |
Short Description: | TRANS NPN 80V 1A |
More Detail: | Bipolar (BJT) Transistor NPN 80V 1A 2W Through Ho... |
DataSheet: | TIP29B-S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 80V |
Vce Saturation (Max) @ Ib, Ic: | 700mV @ 125mA, 1A |
Current - Collector Cutoff (Max): | 300µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 4V |
Power - Max: | 2W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
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Transistors are essential components of electronics circuits, used to amplify signals or switch currents. Bipolar transistors, also known as BJTs, are the most commonly applied transistors in the current era. The TIP29B-S is one of the many varieties of BJT. It is a PNP BJT, meaning it allows current of electrons to flow between two of its three terminals, the collector, emitter, and base. In this article, we will discuss the application field and working principle of the TIP29B-S.
The TIP29B-S is used in automotive, audio and video, circuit protection, computer and instrumentation, industrial, and military and aerospace applications. It is an SOT-57 package type BJT, used in combination with power transistors in power switching circuits, where fast switching times and high currents are needed. It can be used for signal switching and amplifier circuits in industrial and military applications such as frequency modulation and power amplifiers. High temperature and ruggedness are the main advantages in these particular applications over other transistor types.
The working principle of the TIP29B-S is similar to other BJTs. One of its three terminals is the emitter, which has a negative charge. The other two are the collector and the base, which have a positive charge. When current is applied to the base terminal, it causes the electrons in the emitter to be attracted to the base. This in turn attracts the electrons in the collector to the emitter. This creates a current in the collector-emitter circuit, allowing current to flow from the collector to the emitter.
The TIP29B-S has a current amplification factor, also known as the Beta. This is the ratio of the collector current to the base current, and this is one of the main parameters used to determine the power output of the transistor. The TIP29B-S has a beta of 200-400 which makes it suitable for switching and amplifier applications. It also has a low gain-bandwidth product, which is used to measure the efficiency of the transistor. A low gain-bandwidth product indicates that the transistor is more efficient in amplifying signals or switching currents.
The TIP29B-S is also capable of handling very high temperatures, making it suitable for applications in high-temperature environments. Its maximum temperature rating is 150°C, making it the ideal choice for applications where high temperatures are a concern. In addition, the TIP29B-S has a high breakdown voltage rating of 50V, making it suitable for applications involving higher voltages.
The TIP29B-S has many advantages, making it a great choice for a wide range of applications. It has a high power output, a high beta rating for efficient current amplification, suitable for high-temperature and voltage applications, and a low gain-bandwidth product for efficient signal amplification. By understanding its features and characteristics, one can easily determine whether the TIP29B-S is the ideal choice for the desired application.
The specific data is subject to PDF, and the above content is for reference
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