TIP2955 Allicdata Electronics

TIP2955 Discrete Semiconductor Products

Allicdata Part #:

497-2608-5-ND

Manufacturer Part#:

TIP2955

Price: $ 1.41
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: TRANS PNP 60V 15A TO-247
More Detail: Bipolar (BJT) Transistor PNP 60V 15A 90W Through ...
DataSheet: TIP2955 datasheetTIP2955 Datasheet/PDF
Quantity: 1055
1 +: $ 1.27890
10 +: $ 1.14975
100 +: $ 0.92427
500 +: $ 0.75940
1000 +: $ 0.62922
Stock 1055Can Ship Immediately
$ 1.41
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 3V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Power - Max: 90W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The TIP2955 is a single diffused, Power Silicon NPN transistor designed primarily for use in audio, general purpose switching and other power switching applications. It is designed to operate with a wide range of supply and output voltage levels, and has a guaranteed multisourced current gain of minimum 20. The TIP2955 is constructed of three silicon layers consisting of a heavily doped NPN transistor and two PNP transistors. The base of the NPN transistor and the emitters of the two PNP transistors are connected together to form the two terminals. The two PNP transistors are connected to the collector of the NPN transistor.

The general working principle behind the TIP2955 is that when C, or base current, is applied to the base of the NPN transistor, this current creates an internal electric field, which then creates the necessary electric field to forward bias the transistor’s collector-base junction, allowing for conduction of the base current and consequently current amplification, or gain. When the applied voltage to the base of the transistor is increased, the gain is increased accordingly. This is the case for this specific transistor, as the collector current is amplified up to 20 times compared to the base current. Additionally when different voltages are applied to the base of the NPN transistor, the gains become unevenly distributed, proportional to the voltage.

The TIP2955 is a popular single diffusion, power bipolar junction transistor designed for numerous applications. Its structure consisting of the three silicon layers makes it ideal for high power switching, audio amplifier and general purpose applications. With its two internally connected PNP transistors, it further improves its functioning and operation in the power switching area and its current gain is guaranteed to be at least 20. Additionally, when different voltages are applied to the base of the transistor, the current gains become nonlinear and dependant on the applied voltage. The overall working principle of the TIP2955 is that when sufficient current is applied to its base, an internal electric field is created and it forges the collector-base junction to create conduction and amplified base current.

The specific data is subject to PDF, and the above content is for reference

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