TK16A55D(STA4,Q,M) Allicdata Electronics
Allicdata Part #:

TK16A55D(STA4QM)-ND

Manufacturer Part#:

TK16A55D(STA4,Q,M)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET N-CH 550V 16A TO-220SIS
More Detail: N-Channel 550V 16A (Ta) Through Hole TO-220SIS
DataSheet: TK16A55D(STA4,Q,M) datasheetTK16A55D(STA4,Q,M) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: π-MOSVII
Packaging: Tube 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 550V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 25V
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack
Description

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Transistors-FETs, MOSFETs-Single refers to transistors that use only one gate to control its channel of electrons. TK16A55D(STA4,Q,M) is an example of this type of transistor. It is typically used for applications that require low power operation, such as in amplifier or power management circuits. In this article, we will discuss the applications and working principle of the TK16A55D(STA4,Q,M) transistor.

The TK16A55D(STA4,Q,M) transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed for low-power operation. It has an operating temperature range of -20℃ to +150℃ and is available in standard sizes of STM8 and STM10. The maximum power rating of the transistor is 500 mW, with a maximum allowable voltage of 250V. The device has a highly stable threshold voltage and is suitable for use in applications that require low power operation.

The TK16A55D(STA4,Q,M) transistor can be used in many applications, including amplifier and power management circuits, switching circuits, and LED lighting. In amplifier circuits, it can be used for low-power preamplifiers, or power amplifiers. In power management circuits, it can be used for voltage regulation or switching. In switching circuits, the transistor can be used for controlling the flow of current. In LED lighting, it can be used for switching power between multiple LEDs.

The TK16A55D(STA4,Q,M) transistor functions by using the principle of a metal-oxide-semiconductor (MOS) to control the flow of electrons in the device. The MOS consists of an oxide layer on top of a metal layer, with a semiconductor beneath it. When a voltage is applied to the transistor, the metal layer creates a conducting channel through the oxide layer, allowing electrons to flow within the transistor. This controlling process is known as the MOSFET effect and is the basic principle of operation of the TK16A55D(STA4,Q,M) transistor.

The TK16A55D(STA4,Q,M) transistor is an excellent choice for applications that require low power operation. It is also suitable for a wide range of applications, from amplifiers to LED lighting. The highly stable threshold voltage makes it ideal for use in power management circuits. In addition, the device is available in standard sizes of STM8 and STM10, making it easy to integrate into any application. With its wide range of applications and superior performance, the TK16A55D(STA4,Q,M) transistor is an excellent choice for low power circuit applications.

The specific data is subject to PDF, and the above content is for reference

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