Allicdata Part #: | TK16N60WS1VF-ND |
Manufacturer Part#: |
TK16N60W,S1VF |
Price: | $ 4.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 600V 15.8A TO247 |
More Detail: | N-Channel 600V 15.8A (Ta) 130W (Tc) Through Hole T... |
DataSheet: | TK16N60W,S1VF Datasheet/PDF |
Quantity: | 53 |
1 +: | $ 3.77370 |
30 +: | $ 3.03030 |
Vgs(th) (Max) @ Id: | 3.7V @ 790µA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 130W (Tc) |
FET Feature: | Super Junction |
Input Capacitance (Ciss) (Max) @ Vds: | 1350pF @ 300V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | DTMOSIV |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 7.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15.8A (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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,Transistors have long been integral to all sorts of applications, and their importance continues to grow. The TK16N60W and S1VF are both popular bipolar transistors, and their application field and working principles are discussed below.
TK16N60W
The TK16N60W is an advanced single chip MOSFET that incorporates an unipolar transistor and a depletion-mode NMOSFET. This device offers exceptional performance characteristics, such as an improved on-state resistance and reduced storage capacitance. In addition, the TK16N60W features fast switching times and low power dissipation, making it an ideal choice for a variety of high-performance applications.
This device was designed for applications requiring low threshold voltages and high currents of up to 3.2 amps. It is used in power control, drive control, and switching power supply control. The device offers low on-state resistance, making it suitable for high-speed switching in DC/DC converters and signal superimposition. Additionally, the TK16N60W is used in voltage regulators and DC surge suppressors.
A TK16N60W is typically used with an NMOSFET, a P-channel MOSFET, or a diode to form a complementary MOSFET pair. The device works by accepting a control signal voltage from its gate and then regulating the flow of an external current to its drain. As the gate voltage rises or falls, the current flow is adjusted accordingly.
S1VF
The S1VF is a small signal N-channel MOSFET that is suitable for portable and automotive applications. The device offers high speed performance, low gate charge, and low on-resistance. It is also offered with a very low turn-off time. The S1VF is used in a variety of designs, including power switching, drive circuits, and DC/DC converters.
The S1VF is ideal for switching DC/DC converters and AC/DC adapters, as it can handle a power dissipation of up to 2 watts. It is also used in automotive applications, such as lighting and power management circuits. The S1VF features very low power dissipation, making it ideal for battery-operated devices.
The S1VF works by accepting a control signal from its gate and then regulating the flow of an external current to its drain. Unlike the TK16N60W, the S1VF does not require a complementary MOSFET to form a circuit, as it is a single N-channel MOSFET. As the gate voltage rises or falls, the current flow is adjusted accordingly.
Conclusion
The TK16N60W and S1VF are both robust MOSFETs with different application fields. The TK16N60W is well-suited for switching power supplies, signal superimposition, voltage regulators, and DC surge suppressors, while the S1VF is ideal for portable and automotive power switching, drive circuits, and DC/DC converters. Both devices work by accepting a control signal from their gate and then regulating the flow of an external current to their drain.
The specific data is subject to PDF, and the above content is for reference
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