TK16A60W,S4VX

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The TK16A60W,S4VX is a plastic, fully Molded, insulated gate, Field Effect Transistor (IGFET) with N-channel Enhancement Mode MOSFET. It is manufactured and fully commercialized by Toshiba, a leader in the semiconductor market. The TK16A60W,S4VX is a single-drain, dual-gate FET designed for a variety of applications including DC-DC converters and high input impedance circuitries. It is characterized by low on-resistance, fast switching speed, and low capacitances.

The TK16A60W,S4VX is a Si-Device with a vertical planar structure and built-in insulated gate and source. The N-channel type provides a high input impedance to ensure stable operation. The insulated gate and source are designed to be fixed in the appropriate position and the conductive silicon base and the insulated gate are soldered together via a conductive insulation layer, which ensures total electrical isolation.

Thus, the TK16A60W,S4VX is applicable in high input impedance circuitries, DC-DC converter circuits and power supply circuits because of its high input impedance, low on-resistance, fast switching speed, low capacitance and maximum power dissipation of 1.5W. The maximum drain source voltage is 60V, and the gate source voltage can be up to 20V.

The typical TK16A60W,S4VX application field is UPS, Power Management, CCTV and Energy Storage. The power management circuit plays an important role in UPS. The TK16A60W,S4VX can be used in UPS to efficiently control the input and output current and voltage. It can also be used in CCTV to control the voltage of the camera and ensure its stability. With this FET, the accuracy of the power supply to the camera is enhanced. It can also be used in the energy storage system, to control the battery voltage and ensure its stability while storing the energy.

The working principle of the TK16A60W,S4VX is based on the electrical behavior of Field Effect Transistors (FETs). The FETs consists of a gate, drain and source terminals with a conductive channel between the source and the drain. It’s a voltage-controlled device as its operation is based on the voltage applied to the gate terminal. The higher the gate voltage, the greater the current flow from the source to the drain. When the gate voltage Vgs exceeds a certain threshold, the FET enters into the saturation region where it is less resistive. This resistive behavior is what makes FETs the most efficient devices for controlling the current flow between the drain and the source.

To summarize, the TK16A60W,S4VX is a single drain, dual-gate FET designed for a variety of applications including DC-DC converters and high input impedance circuitries. It is characterized by low on-resistance, fast switching speed, and low capacitances. It can be used for for applications like high input impedance circuitries, DC-DC converter circuits, power supply circuits as well as UPS, Power Management, CCTV and Energy Storage. The working principle of the TK16A60W,S4VX is based on the electrical behavior of Field Effect Transistors.

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