TK16E60W,S1VX

Vgs(th) (Max) @ Id:	3.7V @ 790µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	130W (Tc)
FET Feature:	Super Junction
Input Capacitance (Ciss) (Max) @ Vds:	1350pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	190 mOhm @ 7.9A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15.8A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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TK16E60W S1VX is a type of single polarity metal-oxide-semiconductor field-effect transistors (MOSFETs). It is designed to provide excellent performance in applications including power switches, speed controllers, gate drivers, and low side/high side switched loads. The TK16E60W S1VX is made with high-grade silicon wafer material applied with special etching technology to produce a very low open circuit on-state resistance. It has been designed to provide high reliability and improved power efficiency in a wide range of applications. This device also offers excellent levels of thermal management and resistance to short circuit currents. The MOSFETs incorporate a Silicon on Insulator (SOI) structure, which is a crystalline semiconductor structure that consists of one or more thin silicon layers separated by a thin non-conductive layer. This allows for the MOSFET to operate at lower power levels and improved switching speeds for improved power efficiency. The TK16E60W S1VX is an unipolar device, which means that only a single voltage is required to control the transistor. It is operated by applying a voltage to the gate terminal, which creates a mobile inversion layer in the semiconductor and results in electrical current flowing through the MOSFET. This means that the device can act as a switch, controlling the flow of electrical current through the transistor with the application of a single voltage. The TK16E60W S1VX is commonly used in applications such as power switches, speed controllers, gate drivers, and low side/high side switched loads. In a power switch application, the MOSFET is used to control the flow of electric power from a source to a load. In a speed controller application, the MOSFET is used to control the speed of a motor. In a gate driver application, the MOSFET is used to control the flow of current between two points. And in a low side/high side switched load application, the MOSFET is used to control the flow of current between a source and a load. In conclusion, the TK16E60W S1VX is a type of single polarity MOSFET designed to provide excellent performance in numerous applications. It incorporates a Silicon on Insulator structure to reduce power levels and improve switching speeds, and it is operated by applying a single voltage to its gate terminal. The TK16E60W S1VX is commonly used in power switch applications, speed controller applications, gate driver applications, and low side/high side switched load applications.

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