| Allicdata Part #: | TK39J60WS1VQ-ND |
| Manufacturer Part#: |
TK39J60W,S1VQ |
| Price: | $ 7.77 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 600V 38.8A TO-3P |
| More Detail: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole T... |
| DataSheet: |  TK39J60W,S1VQ Datasheet/PDF |
| Quantity: | 41 |
| 1 +: | $ 7.06230 |
| 25 +: | $ 5.79247 |
| 100 +: | $ 5.22730 |
| 500 +: | $ 4.37961 |
| Vgs(th) (Max) @ Id: | 3.7V @ 1.9mA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P(N) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 270W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 19.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Transistors - FETs, MOSFETs - Single
A transistor is a semiconductor device used to switch electrical signals and convert electrical power. FETs and MOSFETs are two of the most popular types of transistors and are widely used in a variety of applications. One type of FET, the TK39J60W,S1VQ, is designed for high-performance applications and provides superior performance in a wide range of applications.
The TK39J60W,S1VQ is a single-gate MOSFET. It is a versatile device which can be used in a variety of applications, including power supply regulation, audio amplification and DC control. Its structure consists of an n-type silicon substrate, a p-type body region, an insulated gate and a source/drain region.
The TK39J60W,S1VQ is a high-voltage device, capable of handling voltages up to 120 V. It has a low on-resistance of about 0.4 Ohms and can theoretically operate at frequencies up to 1 MHz. The device is designed for high-efficiency and high performance.
The TK39J60W,S1VQ is designed for use in a wide range of applications. In power supply regulation, the device can be used to regulate the output voltage from a range of input voltages. In audio amplification, the device can be used to provide high-power, high-efficiency amplification. In DC control, the device can be used to control the electrical characteristics of a circuit.
The working principle of the TK39J60W,S1VQ is based on the controlled rectifying effect of MOSFETs. When a gate voltage is applied, the device switches from a low-impedance “on” state to a high-impedance “off” state. This allows the device to be used to control the flow of current through a circuit.
The TK39J60W,S1VQ is a high-performance device with a wide range of applications. It is capable of handling high voltages and is designed for high-efficiency and high-performance applications. The device is easy to use and can be used in a variety of applications and has a low on-resistance of 0.4 Ohms.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK39J60W5,S1VQ | Toshiba Semi... | 8.81 $ | 49 | MOSFET N CH 600V 38.8A TO... |
| TK39J60W,S1VQ | Toshiba Semi... | 7.77 $ | 41 | MOSFET N-CH 600V 38.8A TO... |
| TK39N60W5,S1VF | Toshiba Semi... | 6.46 $ | 1000 | MOSFET N-CH 600V 38.8A T0... |
| TK39A60W,S4VX | Toshiba Semi... | 7.77 $ | 275 | MOSFET N-CH 600V 39A TO22... |
| TK39N60X,S1F | Toshiba Semi... | 5.22 $ | 106 | MOSFET N-CH 600V 38.8A TO... |
| TK39N60W,S1VF | Toshiba Semi... | 8.29 $ | 6 | MOSFET N CH 600V 38.8A TO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...