| Allicdata Part #: | TK39N60XS1F-ND |
| Manufacturer Part#: |
TK39N60X,S1F |
| Price: | $ 5.22 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 600V 38.8A TO-247 |
| More Detail: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole T... |
| DataSheet: |  TK39N60X,S1F Datasheet/PDF |
| Quantity: | 106 |
| 1 +: | $ 4.75020 |
| 30 +: | $ 3.89571 |
| 120 +: | $ 3.51567 |
| 510 +: | $ 2.94556 |
| 1020 +: | $ 2.56549 |
| Vgs(th) (Max) @ Id: | 3.5V @ 1.9mA |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 270W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
| Series: | DTMOSIV-H |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 12.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The TK39N60X,S1F is a type of Field Effect Transistor, or FET. FETs are transistors that control the flow of current between two terminals (the source and the drain) by means of an electric field. The most common type of FET is the Metal-Oxide-Semiconductor Field-Effect Transistor, or MOSFET. The TK39N60X,S1F is a single MOSFET.
A MOSFET is constructed by a semiconductor of n-type material sandwiched between two metal gates. Current is controlled by the voltage applied to the gate, referred to as the “gate-source voltage” (VGS). When VGS reaches the threshold voltage (Vt), a channel forms and current can flow from source to drain. When VGS is equal to or exceeds the threshold voltage, the MOSFET is said to be “ON”. At this point, the drain current is proportional to the gate-source voltage.
The TK39N60X,S1F is a single n-channel MOSFET with a drain current of 39 A and a resistance of 0.0064 Ohms. It has a maximum drain-source voltage of 60V, a threshold voltage of 4V and a maximum power dissipation of 73W. The high current and low voltage capabilities make it well-suited for use in power supply circuits, including switching power supplies, power over Ethernet (PoE) converters, motor controls, LED driver circuits and battery charging circuits.
MOSFETs are also widely used in signal processing applications such as switching, amplification and filtering. In these applications, the low on-state resistance and high gain of the MOSFET make it useful for high-bandwidth, low-voltage analog signal processing. They are commonly used in audio amplifiers, voltage-controlled oscillators, analog-to-digital converters and digital-to-analog converters.
The TK39N60X,S1F is a versatile MOSFET that can be used in a wide range of applications. The high current capabilities, low on-state resistance and economical price make it ideal for use in power supply and signal processing circuitry.
The specific data is subject to PDF, and the above content is for reference
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