| Allicdata Part #: | TK39J60W5S1VQ-ND |
| Manufacturer Part#: |
TK39J60W5,S1VQ |
| Price: | $ 8.81 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N CH 600V 38.8A TO-3P(N) |
| More Detail: | N-Channel 600V 38.8A (Ta) 270W (Tc) Through Hole T... |
| DataSheet: |  TK39J60W5,S1VQ Datasheet/PDF |
| Quantity: | 49 |
| 1 +: | $ 8.00730 |
| 25 +: | $ 6.56460 |
| 100 +: | $ 5.92427 |
| 500 +: | $ 4.96355 |
| Vgs(th) (Max) @ Id: | 3.7V @ 1.9mA |
| Package / Case: | TO-3P-3, SC-65-3 |
| Supplier Device Package: | TO-3P(N) |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 270W (Tc) |
| FET Feature: | Super Junction |
| Input Capacitance (Ciss) (Max) @ Vds: | 4100pF @ 300V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 135nC @ 10V |
| Series: | DTMOSIV |
| Rds On (Max) @ Id, Vgs: | 65 mOhm @ 19.4A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38.8A (Ta) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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TK39J60W5,S1VQ is a type of single-Chinese-FET or MOSFET, which is specialized for use in various field and applications. As it is a low-power device, it is mainly used in communication and sensor applications, and is often chosen by designers working on small systems that require power efficiency and high performance processing.This device has an operating frequency range which is around 40KHz to 36 MHz, and is popularly used in PWM circuits and high-frequency filters. It also offers advanced switching capabilities, making it a great device to use in switching circuits. Moreover, it is also suitable for use in circuits that require advanced filter functions, and is suitable for signal processing applications.What sets this device apart from others is its advanced internal structure design, which consists of two separate P-channel and two N-Channel MOSFETs. This structure enables it to provide increased performance with reduced power consumption and increased reliability. It is also designed to operate in low temperature.When it comes to working principles, this device works by controlling the voltage with a gate signal. The gate signal controls the current flowing through the device, thus allowing the user to adjust the amount of current needed for the given application. The gate signal also helps in switching between high and low states by providing appropriate resistance and current flow.Overall, TK39J60W5,S1VQ is a highly efficient device that is suitable for a wide range of applications. Its advanced structure design allows for more reliable operation and greater power efficiency. It is also suitable for use in low temperature environments and its high-frequency filter capabilities make it highly reliable when it comes to signal processing applications. Its versatility and power efficiency make it a great choice for any designer seeking to implement advanced technology into their system.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| TK39J60W5,S1VQ | Toshiba Semi... | 8.81 $ | 49 | MOSFET N CH 600V 38.8A TO... |
| TK39J60W,S1VQ | Toshiba Semi... | 7.77 $ | 41 | MOSFET N-CH 600V 38.8A TO... |
| TK39N60W5,S1VF | Toshiba Semi... | 6.46 $ | 1000 | MOSFET N-CH 600V 38.8A T0... |
| TK39A60W,S4VX | Toshiba Semi... | 7.77 $ | 275 | MOSFET N-CH 600V 39A TO22... |
| TK39N60X,S1F | Toshiba Semi... | 5.22 $ | 106 | MOSFET N-CH 600V 38.8A TO... |
| TK39N60W,S1VF | Toshiba Semi... | 8.29 $ | 6 | MOSFET N CH 600V 38.8A TO... |
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