TK39N60W5,S1VF

Vgs(th) (Max) @ Id:	4.5V @ 1.9mA
Package / Case:	TO-247-3
Supplier Device Package:	TO-247
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	270W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4100pF @ 300V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	135nC @ 10V
Series:	DTMOSIV
Rds On (Max) @ Id, Vgs:	74 mOhm @ 19.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	38.8A (Ta)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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TK39N60W5,S1VF is a type of transistor device that belongs to the field effect transistors (FETs) family, more precisely the single MOSFETs. It is used to control current and power in various applications, such as amplifiers, motor control, audio systems and switching. It is ideal for applications that require precision and control over the current or voltage being controlled due to its low gate voltage and low gate capacitance. The basic working principle of transistors is that they act as electronic switches, enabling a small electric current to control a much larger current. Transistors are made of three main components: the gate, drain and source. The gate is the control part of the transistor, where an external voltage or current is applied to the base of the transistor to turn it on or off. When the gate voltage goes below the turn-on threshold, the transistor is off, and when it goes beyond the threshold, the transistor turns on and the current flow is amplified.The main features of TK39N60W5,S1VF are its low gate voltage, low gate capacitance, and Maximum Drain-Source On resistance (RDSon). As a result, it can switch faster and more reliably than other transistors, making it more suitable for applications like amplifiers, motor control, audio systems and power switching. In addition, its small physical size makes it a good choice for applications where space is limited, such as cell phone circuits.Overall, TK39N60W5,S1VF transistors are an efficient and reliable way to control current and power. Their low gate voltage, low gate capacitance, and Maximum Drain-Source On resistance makes them ideal for applications that require precision and control, as well as for applications where space is limited. In addition, their low power consumption makes them suitable for a wide variety of electronics applications.

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