TK4A60DB(STA4,Q,M)

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The TK4A60DB is part of the transistors and Field-Effect Transistors (FETs) category, specifically MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) that belongs to the singles. It is an N-channel enhancement device which features a low power drain and low-on-state resistance, making it suitable for use in various applications, in particular, in switching operations. This type of device is employed in power-supply systems, motor drives, and a wide range of communication systems.

The symbol for this MOSFET is STA4,Q,M (Static Transistor, Quadconfiguration, Metal). It is composed of two MOS transistor halves and has a total of four input terminals, two of which are gate 1 and gate 2. The other two are the collector and drain. The collector is connected to the source, and the drain is connected to the substrate. The arrow symbol between gate1 and drain represent the drain-source on-state voltage. The formula for the drain-source on-state resistance is: R[DS(on)] = V(on)/I(on).

The TK4A60DB works according to the principle of Enhancement Mode. In this configuration, when there is no voltage applied to the gate, an ‘inversion’ layer will be formed around the source and drain. This inversion layer is also called the ‘channel’, and it is determined by the number of electrons that move inside the metal (metal oxide semiconductor) region due to the applied gate voltage. With the increase of the gate-source voltage, the channel will also expand, resulting in a greater number of electrons moving, which in-turn produce a larger drain current.

The main application areas of the TK4A60DB are in high voltage switchgear and semiconductor sensor technology. It can be used as a switch to control the flow of high power current and as a sensing device that provides feedback to control circuits. In addition, this type of MOSFET is very suitable for use in power converters and motor controllers, as they offer a high level of efficiency and low on-state resistance. Furthermore, TK4A60DB devices are used in communications systems and various industrial equipment such as wind turbines.

In conclusion, the TK4A60DB is a versatile MOSFET device that provides high power efficiency and low on-state resistance. It has a wide range of applications in power supplies, motor drives, and communications systems. Its static transistor symbol is STA4,Q,M and it is composed of two MOS transistor halves, each with two input terminals, gate and collector to source, and drain to substrate.

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