Allicdata Part #: | TK4A53D(STA4QM)-ND |
Manufacturer Part#: |
TK4A53D(STA4,Q,M) |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 525V 4A TO-220SIS |
More Detail: | N-Channel 525V 4A (Ta) 35W (Tc) Through Hole TO-22... |
DataSheet: | TK4A53D(STA4,Q,M) Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | π-MOSVII |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 525V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.7 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 11nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
FETs, MOSFETs, and the TK4A53D (STA4,Q,M) Application Field and Working Principle
FETs, MOSFETs, and the TK4A53D (STA4,Q,M) are types of transistors that are used mainly in amplifier circuits. These transistors are made up of four main components: the gate, source, drain, and body. Each of these components is electrically connected to the other components in a way that creates a two-terminal device with two types of electrical current. The gate is the control terminal, the source is the input terminal, and the drain is the output terminal. The body is the substrate on which the other components are connected.
A Field Effect Transistor (FET) is a type of transistor that depends on a field effect principle to operate. FETs operate by applying an electric field between the gate and the source, and the resulting field creates a conducting channel between the drain and the source. The gate terminal governs the flow of the current through this channel and when the electric field decreases the current flow through the channel decreases as well.
A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is very similar to the FET but is made with a semiconductor material such as silicon or gallium arsenide instead of an electric field. A MOSFET has three terminals, the gate, source, and drain. When voltage is applied to the gate, the electric field creates a conducting channel between the drain and the source. This electric field then influences the amount of current that flows through the channel, thus allowing for the control of current. The channel is not actually a physical structure, the term simply refers to the area in the MOSFET where the current is flowing.
The TK4A53D (STA4,Q,M) is a MOSFET with enhanced high frequency and high impedance characteristics. It is made with a proprietary process that results in a high impedance between the gate and the source. The TK4A53D also has a built-in protection feature that prevents it from being damaged when it is exposed to negative voltages. This makes the TK4A53D suitable for many different applications, including audio amplifiers, voltage regulators, power supplies, and switch mode power supply circuits.
The TK4A53D is mainly used in audio amplifier circuits, due to its high frequency characteristics and its ability to switch quickly between two polarities. This makes it particularly useful for low frequency signals, such as bass frequencies. The TK4A53D also offers protection against overcurrent or over-temperature conditions, as it is capable of self-adjusting its gate voltage to prevent further damage.
The TK4A53D is also used in DC-DC converters, as it is capable of fast switching. It is used in these applications because it is capable of switching quickly between two polarities, allowing for the quick change of voltage levels required for the typical DC-DC converter. The TK4A53D is also used in voltage regulators and power supplies, due to its high impedance and fast switching capabilities. As the device is capable of switching quickly, it is ideal for applications that require quick changes in voltage levels.
The TK4A53D is a great addition to any type of amplifier circuit, especially those that require fast switching, high impedance, and protection against over-temperature, over-current conditions. It is also useful for voltage and power supply, and DC-DC converter applications, due to its fast switching capabilities. The device is relatively easy to use, as it requires just a single gate voltage to operate, and provides protection against over-voltage, over-current, and over-temperature conditions.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
TK4A60D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 4A TO-22... |
TK4A60DA(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.5A TO2... |
TK4A50D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 500V 4A TO-22... |
TK4A53D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 525V 4A TO-22... |
TK4A55DA(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 550V 3.5A TO-... |
TK4A55D(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 550V 4A TO-22... |
TK4A60DB(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 600V 3.7A TO-... |
TK4A65DA(STA4,Q,M) | Toshiba Semi... | 0.0 $ | 1000 | MOSFET N-CH 650V 3.5A TO-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...